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Growth of sapphire thin films by pulsed laser deposition

Growth of sapphire thin films by pulsed laser deposition
Growth of sapphire thin films by pulsed laser deposition
Formation of sapphire thin films, and most particularly sapphire waveguides, is of great importance in the context of optical and opto-electronic devices. Sapphire is the hardest of all oxide crystals, and has a range of physical properties such as thermal conductivity, electrical conductivity and resistance to chemical attack, that make it a superb choice for environments where extended UV transmission, reliability and strength are required.

In the optics arena, titanium-doped sapphire has had a radical impact on the field of tunable lasers. Ti:Al2O3 - is an optically pumpable crystal, producing a laser capable of operating between 650 nm and 1100 nm. Typical dopant levels for Ti3+ ions are at the ~0.1% level in commercial samples of Ti:Al2O3, which yields an absorption coefficient of lambda = 2.0 cm-1 at 514.5 nm, a suitable wavelength region for optically pumping into the peak of the absorption band at 490 nm.

To date, the fabrication of sapphire waveguides has had mixed success. Ion-beam implantation studies have been carried out using He ions, but the formation of the index barriers required for guidance has necessitated doses exceeding 1017 ions/cm2, which causes surface damage, fracture, and formation of new compounds within the layer. Chemically active ions such as carbon have also been implanted, but the resultant waveguide losses are still high.

An alternative route involving RF sputtering has produced amorphous films, but these are not of the same refractive index as crystalline sapphire, and were susceptible to chemical attack. Further work is in progress on in-diffusion of titanium into sapphire to make waveguiding layers. In this work, we describe our first attempts to grow crystalline films of a - Al2O3, sapphire, via PLD.
ULF-LENS
Eason, R.W.
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Hickey, L.M.B.
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Mailis, S.
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Jelínek, M.
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Rogers, K.
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Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Mailis, S.
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Rogers, K.
67fd7192-bdf3-44fe-9d8b-238ecba16a60

Eason, R.W., Hickey, L.M.B., Mailis, S., Jelínek, M. and Rogers, K. (1995) Growth of sapphire thin films by pulsed laser deposition (Annual Report 1994-1995) GB. ULF-LENS 15pp.

Record type: Monograph (Project Report)

Abstract

Formation of sapphire thin films, and most particularly sapphire waveguides, is of great importance in the context of optical and opto-electronic devices. Sapphire is the hardest of all oxide crystals, and has a range of physical properties such as thermal conductivity, electrical conductivity and resistance to chemical attack, that make it a superb choice for environments where extended UV transmission, reliability and strength are required.

In the optics arena, titanium-doped sapphire has had a radical impact on the field of tunable lasers. Ti:Al2O3 - is an optically pumpable crystal, producing a laser capable of operating between 650 nm and 1100 nm. Typical dopant levels for Ti3+ ions are at the ~0.1% level in commercial samples of Ti:Al2O3, which yields an absorption coefficient of lambda = 2.0 cm-1 at 514.5 nm, a suitable wavelength region for optically pumping into the peak of the absorption band at 490 nm.

To date, the fabrication of sapphire waveguides has had mixed success. Ion-beam implantation studies have been carried out using He ions, but the formation of the index barriers required for guidance has necessitated doses exceeding 1017 ions/cm2, which causes surface damage, fracture, and formation of new compounds within the layer. Chemically active ions such as carbon have also been implanted, but the resultant waveguide losses are still high.

An alternative route involving RF sputtering has produced amorphous films, but these are not of the same refractive index as crystalline sapphire, and were susceptible to chemical attack. Further work is in progress on in-diffusion of titanium into sapphire to make waveguiding layers. In this work, we describe our first attempts to grow crystalline films of a - Al2O3, sapphire, via PLD.

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Published date: 1995
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 394272
URI: https://eprints.soton.ac.uk/id/eprint/394272
PURE UUID: 97a9221f-7c78-484a-9b19-15ee2b7c5fd9
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204
ORCID for S. Mailis: ORCID iD orcid.org/0000-0001-8100-2670

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Date deposited: 13 May 2016 09:09
Last modified: 26 Jul 2018 00:36

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Contributors

Author: R.W. Eason ORCID iD
Author: L.M.B. Hickey
Author: S. Mailis ORCID iD
Author: M. Jelínek
Author: K. Rogers

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