Study of lateral mode SOI-MEMS resonators for reduced anchor loss
Study of lateral mode SOI-MEMS resonators for reduced anchor loss
MEMS resonators fabricated in silicon-on-insulator (SOI) technology must be clamped to the substrate via anchoring stems connected either from within the resonator or through the sides, with the side-clamped solution often employed due to manufacturing constraints. This paper examines the effect of two types of commonly used side-clamped, anchoring-stem geometries on the quality factor of three different laterally-driven resonator topologies. This study employs an analytical framework which considers the relative distribution of strain energies between the resonating body and clamping stems. The ratios of the strain energies are computed using ANSYS FEA and used to provide an indicator of the expected anchor-limited quality factors. Three MEMS resonator topologies have been fabricated and characterized in moderate vacuum. The associated measured quality factors are compared against the computed strain energy ratios, and the trends are shown to agree well with the experimental data.
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Lee, Joshua E.-Y.
ccb36662-e370-49bf-af3d-ee047bd230df
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Seshia, Ashwin A.
6fe2b5b5-e451-41e2-a23a-601c9faf7d8a
4 March 2011
Lee, Joshua E.-Y.
ccb36662-e370-49bf-af3d-ee047bd230df
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Seshia, Ashwin A.
6fe2b5b5-e451-41e2-a23a-601c9faf7d8a
Lee, Joshua E.-Y., Yan, Jize and Seshia, Ashwin A.
(2011)
Study of lateral mode SOI-MEMS resonators for reduced anchor loss.
Journal of Micromechanics and Microengineering, 21 (4), .
(doi:10.1088/0960-1317/21/4/045010).
Abstract
MEMS resonators fabricated in silicon-on-insulator (SOI) technology must be clamped to the substrate via anchoring stems connected either from within the resonator or through the sides, with the side-clamped solution often employed due to manufacturing constraints. This paper examines the effect of two types of commonly used side-clamped, anchoring-stem geometries on the quality factor of three different laterally-driven resonator topologies. This study employs an analytical framework which considers the relative distribution of strain energies between the resonating body and clamping stems. The ratios of the strain energies are computed using ANSYS FEA and used to provide an indicator of the expected anchor-limited quality factors. Three MEMS resonator topologies have been fabricated and characterized in moderate vacuum. The associated measured quality factors are compared against the computed strain energy ratios, and the trends are shown to agree well with the experimental data.
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Published date: 4 March 2011
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 394378
URI: http://eprints.soton.ac.uk/id/eprint/394378
ISSN: 0960-1317
PURE UUID: 62298905-815a-4c79-b443-1880f2fa5bf9
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Date deposited: 17 Jun 2016 15:49
Last modified: 15 Mar 2024 03:53
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Author:
Joshua E.-Y. Lee
Author:
Ashwin A. Seshia
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