The influence of hysteresis voltage on single event transients in a 65nm CMOS high speed comparator
The influence of hysteresis voltage on single event transients in a 65nm CMOS high speed comparator
Nawi, Illani Mohd
d9576d92-d667-4dae-a7ec-6bfa9bed2b3e
Halak, Basel
8221f839-0dfd-4f81-9865-37def5f79f33
Zwolinski, Mark
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
Nawi, Illani Mohd
d9576d92-d667-4dae-a7ec-6bfa9bed2b3e
Halak, Basel
8221f839-0dfd-4f81-9865-37def5f79f33
Zwolinski, Mark
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
Nawi, Illani Mohd, Halak, Basel and Zwolinski, Mark
(2016)
The influence of hysteresis voltage on single event transients in a 65nm CMOS high speed comparator.
21st IEEE European Test Symposium.
(doi:10.1109/ETS.2016.7519300).
Record type:
Conference or Workshop Item
(Poster)
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e-pub ahead of print date: 25 July 2016
Venue - Dates:
21st IEEE European Test Symposium, 2016-05-27
Organisations:
Faculty of Physical Sciences and Engineering
Identifiers
Local EPrints ID: 394523
URI: http://eprints.soton.ac.uk/id/eprint/394523
PURE UUID: 19ba5b10-6794-4102-8e47-62ce09b098e4
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Date deposited: 17 May 2016 16:51
Last modified: 15 Mar 2024 03:39
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Contributors
Author:
Illani Mohd Nawi
Author:
Basel Halak
Author:
Mark Zwolinski
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