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Electrochemical deposition of bismuth telluride thick layers onto nickel

Electrochemical deposition of bismuth telluride thick layers onto nickel
Electrochemical deposition of bismuth telluride thick layers onto nickel
Bismuth telluride (Bi2Te3) is the currently best performing thermoelectric (TE) material in commercial TE devices for refrigeration and waste heat recovery up to 200 °C. Up to 800 ?m thick, compact, uniform and stoichiometric Bi2Te3 films were synthesized by pulsed electrodeposition from 2 M nitric acid baths containing bismuth and tellurium dioxide on 1 cm2 nickel (Ni) substrates at average film growth rates of ~ 50 ?m/h. Pre-treatment of the Ni substrate was found to significantly enhance the adhesion of Bi2Te3 material onto Ni while pulsed electrodeposition was used to increase the compactness of the material. To maintain a homogeneous composition across the thickness of the films, a sacrificial Bi2Te3 anode was employed. All deposits produced were n-type with a Seebeck coefficient of up to ? 80 ?V/K and an electrical conductivity of ~ 330 S/cm at room temperature.
1388-2481
1-4
Lei, C.
b34ae878-2776-4088-8880-5b2bd4f33ec3
Ryder, K.S.
16b00bc5-8b9a-4d28-ab06-eaa47977466b
Burton, M.
4a0d87d4-48b8-46bb-8b4d-3b3cf754563b
Nandhakumar, I.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Lei, C.
b34ae878-2776-4088-8880-5b2bd4f33ec3
Ryder, K.S.
16b00bc5-8b9a-4d28-ab06-eaa47977466b
Burton, M.
4a0d87d4-48b8-46bb-8b4d-3b3cf754563b
Nandhakumar, I.
e9850fe5-1152-4df8-8a26-ed44b5564b04

Lei, C., Ryder, K.S., Burton, M. and Nandhakumar, I. (2016) Electrochemical deposition of bismuth telluride thick layers onto nickel. Electrochemistry Communications, 66, 1-4. (doi:10.1016/j.elecom.2016.02.005).

Record type: Article

Abstract

Bismuth telluride (Bi2Te3) is the currently best performing thermoelectric (TE) material in commercial TE devices for refrigeration and waste heat recovery up to 200 °C. Up to 800 ?m thick, compact, uniform and stoichiometric Bi2Te3 films were synthesized by pulsed electrodeposition from 2 M nitric acid baths containing bismuth and tellurium dioxide on 1 cm2 nickel (Ni) substrates at average film growth rates of ~ 50 ?m/h. Pre-treatment of the Ni substrate was found to significantly enhance the adhesion of Bi2Te3 material onto Ni while pulsed electrodeposition was used to increase the compactness of the material. To maintain a homogeneous composition across the thickness of the films, a sacrificial Bi2Te3 anode was employed. All deposits produced were n-type with a Seebeck coefficient of up to ? 80 ?V/K and an electrical conductivity of ~ 330 S/cm at room temperature.

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Accepted/In Press date: 5 February 2016
e-pub ahead of print date: 13 February 2016
Published date: May 2016
Organisations: Chemistry

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Local EPrints ID: 394556
URI: http://eprints.soton.ac.uk/id/eprint/394556
ISSN: 1388-2481
PURE UUID: bdf6ba24-dbfe-4989-b4bb-69e0141e610f
ORCID for I. Nandhakumar: ORCID iD orcid.org/0000-0002-9668-9126

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Date deposited: 20 May 2016 11:09
Last modified: 17 Dec 2019 01:56

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Contributors

Author: C. Lei
Author: K.S. Ryder
Author: M. Burton
Author: I. Nandhakumar ORCID iD

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