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Tensile strain engineering of germanium micro-disks on free-standing SiO2 beams

Tensile strain engineering of germanium micro-disks on free-standing SiO2 beams
Tensile strain engineering of germanium micro-disks on free-standing SiO2 beams
Tensile strain is required to enhance light-emitting direct-gap recombinations in germanium (Ge), which is a promising group IV material for realizing a monolithic light source on Si. Ge micro-disks on free-standing SiO2 beams were fabricated using Ge-on-Insulator wafers for applying tensile strain to Ge in a structure compatible with an optical confinement. We have studied the nature of the strain by Raman spectroscopy in comparison with finite-element computer simulations. We show the impacts of the beam design on the corresponding strain value, orientation, and uniformity, which can be exploited for Ge light emission applications. It was found that the tensile strain values are larger if the length of the beam is smaller. We confirmed that both uniaxial and biaxial strain can be applied to Ge disks, and maximum strain values of 1.1 and 0.6% have been achieved, as confirmed by Raman spectroscopy. From the photoluminescence spectra of Ge micro-disks, we have also found a larger energy splitting between the light-hole and the heavy-hole bands in shorter beams, indicating the impact of tensile strain.
Strain, Engineering, Germanium, Ge, disks, light, laser, band gap
0021-4922
1-7
Al-Attili, Abdelrahman
534a1c1f-3f8c-4a78-b71b-50c156e23373
Kako, Satoshi
f69c5167-7bf1-49de-bcf2-ce9257d77e4c
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Iwamoto, Satoshi
b2b6caf6-235f-4e92-b1a8-e15d09dd3e25
Arakawa, Yasuhiko
3000500d-1c3d-4d03-911c-b59c8b4f7c75
Saito, Shin
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Al-Attili, Abdelrahman
534a1c1f-3f8c-4a78-b71b-50c156e23373
Kako, Satoshi
f69c5167-7bf1-49de-bcf2-ce9257d77e4c
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Iwamoto, Satoshi
b2b6caf6-235f-4e92-b1a8-e15d09dd3e25
Arakawa, Yasuhiko
3000500d-1c3d-4d03-911c-b59c8b4f7c75
Saito, Shin
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Al-Attili, Abdelrahman, Kako, Satoshi, Husain, Muhammad, Gardes, Frederic, Iwamoto, Satoshi, Arakawa, Yasuhiko and Saito, Shin (2016) Tensile strain engineering of germanium micro-disks on free-standing SiO2 beams. Japanese Journal of Applied Physics, 55 (4S), 1-7. (doi:10.7567/JJAP.55.04EH02).

Record type: Article

Abstract

Tensile strain is required to enhance light-emitting direct-gap recombinations in germanium (Ge), which is a promising group IV material for realizing a monolithic light source on Si. Ge micro-disks on free-standing SiO2 beams were fabricated using Ge-on-Insulator wafers for applying tensile strain to Ge in a structure compatible with an optical confinement. We have studied the nature of the strain by Raman spectroscopy in comparison with finite-element computer simulations. We show the impacts of the beam design on the corresponding strain value, orientation, and uniformity, which can be exploited for Ge light emission applications. It was found that the tensile strain values are larger if the length of the beam is smaller. We confirmed that both uniaxial and biaxial strain can be applied to Ge disks, and maximum strain values of 1.1 and 0.6% have been achieved, as confirmed by Raman spectroscopy. From the photoluminescence spectra of Ge micro-disks, we have also found a larger energy splitting between the light-hole and the heavy-hole bands in shorter beams, indicating the impact of tensile strain.

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More information

Accepted/In Press date: 28 December 2015
Published date: 2 March 2016
Keywords: Strain, Engineering, Germanium, Ge, disks, light, laser, band gap
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 394681
URI: https://eprints.soton.ac.uk/id/eprint/394681
ISSN: 0021-4922
PURE UUID: 5ea6be18-f569-4637-8e91-8f970b57c925
ORCID for Shin Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 23 May 2016 11:16
Last modified: 15 Jul 2019 20:28

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