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Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices

Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices
Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices
The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.
1687-8442
1-11
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2

Littlejohns, Callum, Domínguez Bucio, Thalía, Nedeljković, Milos, Mashanovich, Goran, Reed, Graham and Gardes, Frederic (2016) Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices. Advances in Materials Science and Engineering, 2016 (4154256), 1-11. (doi:10.1155/2016/4154256).

Record type: Article

Abstract

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

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More information

Accepted/In Press date: 18 May 2016
Published date: 9 June 2016
Organisations: Optoelectronics Research Centre, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 394684
URI: https://eprints.soton.ac.uk/id/eprint/394684
ISSN: 1687-8442
PURE UUID: 332c59d8-3392-40a1-8971-a0abff758d82
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403
ORCID for Milos Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

Catalogue record

Date deposited: 18 May 2016 14:50
Last modified: 03 Dec 2019 01:35

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Contributors

Author: Callum Littlejohns
Author: Milos Nedeljković ORCID iD
Author: Graham Reed
Author: Frederic Gardes

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