Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices
Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices
The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.
1-11
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
9 June 2016
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, Callum, Domínguez Bucio, Thalía, Nedeljković, Miloš, Mashanovich, Goran, Reed, Graham and Gardes, Frederic
(2016)
Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices.
Advances in Materials Science and Engineering, 2016 (4154256), , [4154256].
(doi:10.1155/2016/4154256).
Abstract
The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.
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4154256 (2)
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Accepted/In Press date: 18 May 2016
Published date: 9 June 2016
Organisations:
Optoelectronics Research Centre, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 394684
URI: http://eprints.soton.ac.uk/id/eprint/394684
ISSN: 1687-8442
PURE UUID: 332c59d8-3392-40a1-8971-a0abff758d82
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Date deposited: 18 May 2016 14:50
Last modified: 15 Mar 2024 04:02
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