High-throughput synthesis and characterization of (BaxSr1–x)1+yTi1–yO3-δ and (BaxSr1–x)1+yTi1–yO3–zNz perovskite thin films
High-throughput synthesis and characterization of (BaxSr1–x)1+yTi1–yO3-δ and (BaxSr1–x)1+yTi1–yO3–zNz perovskite thin films
Thin films of (BaxSr1–x)1+yTi1–y and Zr, Gd codoped (BaxSr1–x)1+yTi1–y were deposited on platinized sapphire substrates at 640 °C under constant flux of atomic oxygen or a mixture of atomic oxygen and nitrogen to synthesize perovskites of (BaxSr1–x)1+yTi1–yO3-δ (also referred to as BSTO), (BaxSr1–x)1+yTi1–yO3–zNz (also referred to as BSTON), and Zr, Gd codoped (BaxSr1–x)1+yTi1–yO3–zNz. Structural characterization was done via XRD and XPS, and electrical characterization was done via LCR (dielectric properties and tunability under DC bias) and P–E measurements. Although the levels of nitrogen incorporated within the perovskite structure appear to be very low as determined by XPS analysis, definite improvements in dielectric properties and tunability have been achieved by synthesis of the BSTON oxynitride films. For a composition of Ba0.8Sr0.2TiO3–zNz an improvement by a factor of 1.72 for tunability and 1.44 for relative permittivity has been observed between the oxide and the oxynitride. The oxynitride achieved a tunability ratio of 6.78 to 1 (close to 7:1) under an applied electrical field of 34 kV/mm. The high throughput approach allowed us to highlight a compositional shift for the material with the best dielectric properties when comparing the oxide with the oxynitride thin films. Effects of codoping the perovskite structure with Zr and Gd have also been investigated and although the tunability and dielectric constant of the thin films were not improved, some improvements in dielectric losses were observed, along with a superparaelectric state as observed by P–E hysteresis measurements.
523-532
David, Anais
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Guerin, Samuel
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Hayden, Brian
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Noble, Robert
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Soulié, Jean-Philippe
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Vian, Christopher
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Koutsaroff, Ivoyl P.
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Higai, Shin’ichi
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Tanaka, Nobuhiko
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Konoike, Takehiro
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Ando, Akira
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Takagi, Hiroshi
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Yamamoto, Teiji
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Fukura, Tadao
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Ieki, Hideharu
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5 February 2014
David, Anais
39e47a40-2ff7-4497-84f0-81e46340ff7e
Guerin, Samuel
e185e0c2-85c6-4d1c-a2cf-cd2f410d346f
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Noble, Robert
74047079-9e03-4a6b-911b-9f45f404d671
Soulié, Jean-Philippe
b44fa895-0927-40a2-a6e2-525574f3285d
Vian, Christopher
c5ca4c67-5a34-475e-b99b-04593f9c6cc9
Koutsaroff, Ivoyl P.
fda42661-ae98-481f-b52c-796ed5840d3e
Higai, Shin’ichi
8896c190-c926-406e-8610-1a4fec0a6476
Tanaka, Nobuhiko
85fb5b8d-c410-481f-9b9b-3d53b70c9497
Konoike, Takehiro
36ed3c0a-95e1-480d-9efa-eb6c90476356
Ando, Akira
706c5fe6-0269-42b3-8416-154e7eab28b6
Takagi, Hiroshi
2336378f-185b-4b78-ad4f-e0e32437d87d
Yamamoto, Teiji
fa01722b-aa6e-4c28-88ac-0774c8735661
Fukura, Tadao
03073277-4261-44c0-851d-8c6de4a93d18
Ieki, Hideharu
90d5da6b-078d-4e98-8e73-34c800157647
David, Anais, Guerin, Samuel, Hayden, Brian, Noble, Robert, Soulié, Jean-Philippe, Vian, Christopher, Koutsaroff, Ivoyl P., Higai, Shin’ichi, Tanaka, Nobuhiko, Konoike, Takehiro, Ando, Akira, Takagi, Hiroshi, Yamamoto, Teiji, Fukura, Tadao and Ieki, Hideharu
(2014)
High-throughput synthesis and characterization of (BaxSr1–x)1+yTi1–yO3-δ and (BaxSr1–x)1+yTi1–yO3–zNz perovskite thin films.
[in special issue: Virtual special issue on Anion-Controlled New Inorganic Materials.]
Crystal Growth & Design, 14 (2), .
(doi:10.1021/cg401259r).
Abstract
Thin films of (BaxSr1–x)1+yTi1–y and Zr, Gd codoped (BaxSr1–x)1+yTi1–y were deposited on platinized sapphire substrates at 640 °C under constant flux of atomic oxygen or a mixture of atomic oxygen and nitrogen to synthesize perovskites of (BaxSr1–x)1+yTi1–yO3-δ (also referred to as BSTO), (BaxSr1–x)1+yTi1–yO3–zNz (also referred to as BSTON), and Zr, Gd codoped (BaxSr1–x)1+yTi1–yO3–zNz. Structural characterization was done via XRD and XPS, and electrical characterization was done via LCR (dielectric properties and tunability under DC bias) and P–E measurements. Although the levels of nitrogen incorporated within the perovskite structure appear to be very low as determined by XPS analysis, definite improvements in dielectric properties and tunability have been achieved by synthesis of the BSTON oxynitride films. For a composition of Ba0.8Sr0.2TiO3–zNz an improvement by a factor of 1.72 for tunability and 1.44 for relative permittivity has been observed between the oxide and the oxynitride. The oxynitride achieved a tunability ratio of 6.78 to 1 (close to 7:1) under an applied electrical field of 34 kV/mm. The high throughput approach allowed us to highlight a compositional shift for the material with the best dielectric properties when comparing the oxide with the oxynitride thin films. Effects of codoping the perovskite structure with Zr and Gd have also been investigated and although the tunability and dielectric constant of the thin films were not improved, some improvements in dielectric losses were observed, along with a superparaelectric state as observed by P–E hysteresis measurements.
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e-pub ahead of print date: 24 January 2014
Published date: 5 February 2014
Organisations:
Electrochemistry
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Local EPrints ID: 395504
URI: http://eprints.soton.ac.uk/id/eprint/395504
ISSN: 1528-7483
PURE UUID: 25a31b41-3c4e-457e-8b4f-8c2a2c48c44d
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Date deposited: 31 May 2016 11:23
Last modified: 15 Mar 2024 02:36
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Contributors
Author:
Anais David
Author:
Samuel Guerin
Author:
Robert Noble
Author:
Jean-Philippe Soulié
Author:
Christopher Vian
Author:
Ivoyl P. Koutsaroff
Author:
Shin’ichi Higai
Author:
Nobuhiko Tanaka
Author:
Takehiro Konoike
Author:
Akira Ando
Author:
Hiroshi Takagi
Author:
Teiji Yamamoto
Author:
Tadao Fukura
Author:
Hideharu Ieki
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