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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978

Morgan, Katrina, de Groot, Kees and Huang, Ruomeng (2014) The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices. IEEE International Symposium. 01 - 05 Jun 2014.

Record type: Conference or Workshop Item (Other)
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e-pub ahead of print date: 1 June 2014
Venue - Dates: IEEE International Symposium, 2014-06-01 - 2014-06-05
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 396490
URI: http://eprints.soton.ac.uk/id/eprint/396490
PURE UUID: 207d3235-30b7-4ed2-9dc0-bc4adc6316f6
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 08 Jun 2016 17:34
Last modified: 19 Nov 2019 01:50

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