Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2
Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2
High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is sigma(SE) = 21.4 × 10-20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 µs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ~2.5 × 10-17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ~4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 µm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.
365-372
Loiko, P.
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Yoon, S.
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Serres, J.M.
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Mateos, X.
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Beecher, S.
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Birch, R.B.
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Savitski, V.G.
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Kemp, A.J.
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Yumashev, K.
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Griebner, U.
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Petrov, V.
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Aguiló, M.
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Díaz, F.
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Mackenzie, J.
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August 2016
Loiko, P.
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Yoon, S.
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Serres, J.M.
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Mateos, X.
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Beecher, S.
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Birch, R.B.
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Savitski, V.G.
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Kemp, A.J.
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Yumashev, K.
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Griebner, U.
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Petrov, V.
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Aguiló, M.
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Díaz, F.
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Mackenzie, J.
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Loiko, P., Yoon, S., Serres, J.M., Mateos, X., Beecher, S., Birch, R.B., Savitski, V.G., Kemp, A.J., Yumashev, K., Griebner, U., Petrov, V., Aguiló, M., Díaz, F. and Mackenzie, J.
(2016)
Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2.
Optical Materials, 58, .
(doi:10.1016/j.optmat.2016.06.005).
Abstract
High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is sigma(SE) = 21.4 × 10-20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 µs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ~2.5 × 10-17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ~4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 µm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.
Text
Pavel Opt Mat 2016 V58 p365.pdf
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Accepted/In Press date: 3 June 2016
e-pub ahead of print date: 11 June 2016
Published date: August 2016
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 396827
URI: http://eprints.soton.ac.uk/id/eprint/396827
PURE UUID: e39ba285-8c27-410c-a1a1-be7143c456c4
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Date deposited: 13 Jun 2016 15:50
Last modified: 15 Mar 2024 05:40
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Contributors
Author:
P. Loiko
Author:
S. Yoon
Author:
J.M. Serres
Author:
X. Mateos
Author:
S. Beecher
Author:
R.B. Birch
Author:
V.G. Savitski
Author:
A.J. Kemp
Author:
K. Yumashev
Author:
U. Griebner
Author:
V. Petrov
Author:
M. Aguiló
Author:
F. Díaz
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