Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

Abstract

Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100?nm diameter with pitch down to 500?nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition

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ORCID for Ruomeng Huang: orcid.org/0000-0003-1185-635X

ORCID for Andrew Hector: orcid.org/0000-0002-9964-2163

ORCID for William Levason: orcid.org/0000-0003-3540-0971

ORCID for Gill Reid: orcid.org/0000-0001-5349-3468

ORCID for C.H. (Kees) de Groot: orcid.org/0000-0002-3850-7101

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