Switching mechanisms of Cu/SiC resistive memories with W and Au counter electrodes
Switching mechanisms of Cu/SiC resistive memories with W and Au counter electrodes
Morgan, Katrina
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de Groot, Kees
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Fan, Junqing
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Gowers, Robert
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Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Gowers, Robert
35716eae-8c54-4dcf-800d-a08c6382dd1e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Morgan, Katrina, de Groot, Kees, Fan, Junqing, Gowers, Robert and Jiang, Liudi
(2016)
Switching mechanisms of Cu/SiC resistive memories with W and Au counter electrodes.
74th Device Research Conference, Newark, United States.
19 - 22 Jun 2016.
2 pp
.
Record type:
Conference or Workshop Item
(Poster)
Text
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e-pub ahead of print date: 20 June 2016
Venue - Dates:
74th Device Research Conference, Newark, United States, 2016-06-19 - 2016-06-22
Organisations:
Engineering Mats & Surface Engineerg Gp, Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 397421
URI: http://eprints.soton.ac.uk/id/eprint/397421
PURE UUID: c45a55bc-6c22-4f25-b491-4f4c68788dd7
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Date deposited: 01 Jul 2016 08:52
Last modified: 15 Mar 2024 03:37
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Contributors
Author:
Katrina Morgan
Author:
Junqing Fan
Author:
Robert Gowers
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