All-dielectric phase-change reconfigurable metasurface
All-dielectric phase-change reconfigurable metasurface
We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness films of GST present high-quality resonances that are spectrally shifted by laser-induced structural transitions, providing reflectivity and transmission switching contrast ratios of up to 5:1 (7dB) at visible/near-infrared wavelengths selected by design.
Karvounis, Artemios
878c12bb-c30e-46f4-8c56-86423b41cdba
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Zheludev, Nikolay I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
2 August 2016
Karvounis, Artemios
878c12bb-c30e-46f4-8c56-86423b41cdba
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Zheludev, Nikolay I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Karvounis, Artemios, Gholipour, Behrad, MacDonald, Kevin F. and Zheludev, Nikolay I.
(2016)
All-dielectric phase-change reconfigurable metasurface.
Applied Physics Letters, 109 (5), [051103].
(doi:10.1063/1.4959272).
Abstract
We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness films of GST present high-quality resonances that are spectrally shifted by laser-induced structural transitions, providing reflectivity and transmission switching contrast ratios of up to 5:1 (7dB) at visible/near-infrared wavelengths selected by design.
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GST nanogratings APL accepted version.pdf
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karvounis GST nanogratings.pdf
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Accepted/In Press date: 1 July 2016
e-pub ahead of print date: 2 August 2016
Published date: 2 August 2016
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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 397696
URI: http://eprints.soton.ac.uk/id/eprint/397696
ISSN: 0003-6951
PURE UUID: 745636fa-9648-4261-9f00-494dc13343f0
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Date deposited: 05 Jul 2016 08:59
Last modified: 15 Mar 2024 05:43
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Contributors
Author:
Artemios Karvounis
Author:
Behrad Gholipour
Author:
Kevin F. MacDonald
Author:
Nikolay I. Zheludev
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