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The effect of resin/hardener stoichiometry on the electrical properties of silicon nitride/epoxy nanocomposites

The effect of resin/hardener stoichiometry on the electrical properties of silicon nitride/epoxy nanocomposites
The effect of resin/hardener stoichiometry on the electrical properties of silicon nitride/epoxy nanocomposites
The effect of resin/hardener stoichiometry was investigated for both unfilled epoxy and nanocomposite samples. The results indicate that incorporating silicon nitride nanofiller, which contains amine groups on its surface, has a significant influence on the resin/hardener reaction. At 2 wt.% of nanofiller, it was estimated that the powder contains amine groups equivalent to around 5 wt.% of the hardener mass, which results in the displacement of the optimum resin/hardener mass ratio by the same amount (~5 wt.%). The dielectric spectra showed that the B relaxation is directly related to the hydroxyether groups that are generated by the reaction between the epoxy and the amine groups. Therefore, the relaxation strength is proportional to the crosslinking density and consequently related to the glass transition temperature. The DC conductivity increases considerably as a result of incorporating silicon nitride nanofiller when not compensating for its impact on the resin/hardener stoichiometry. This might be related to the increase in the amine content of the material caused by the amine groups existing on the surface of the nanoparticles. When the stoichiometry effect is taken into account, the DC conductivity decreased to a value that is comparable to that of the unfilled polymer.
IEEE
Alhabill, Fuad
253d8162-b329-46cc-ace6-5e39a8caca33
Vaughan, Alun
6d813b66-17f9-4864-9763-25a6d659d8a3
Andritsch, Thomas
8681e640-e584-424e-a1f1-0d8b713de01c
Alhabill, Fuad
253d8162-b329-46cc-ace6-5e39a8caca33
Vaughan, Alun
6d813b66-17f9-4864-9763-25a6d659d8a3
Andritsch, Thomas
8681e640-e584-424e-a1f1-0d8b713de01c

Alhabill, Fuad, Vaughan, Alun and Andritsch, Thomas (2016) The effect of resin/hardener stoichiometry on the electrical properties of silicon nitride/epoxy nanocomposites. In Proceedings of the 2016 IEEE INTERNATIONAL CONFERENCE ON DIELECTRICS. IEEE. 4 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

The effect of resin/hardener stoichiometry was investigated for both unfilled epoxy and nanocomposite samples. The results indicate that incorporating silicon nitride nanofiller, which contains amine groups on its surface, has a significant influence on the resin/hardener reaction. At 2 wt.% of nanofiller, it was estimated that the powder contains amine groups equivalent to around 5 wt.% of the hardener mass, which results in the displacement of the optimum resin/hardener mass ratio by the same amount (~5 wt.%). The dielectric spectra showed that the B relaxation is directly related to the hydroxyether groups that are generated by the reaction between the epoxy and the amine groups. Therefore, the relaxation strength is proportional to the crosslinking density and consequently related to the glass transition temperature. The DC conductivity increases considerably as a result of incorporating silicon nitride nanofiller when not compensating for its impact on the resin/hardener stoichiometry. This might be related to the increase in the amine content of the material caused by the amine groups existing on the surface of the nanoparticles. When the stoichiometry effect is taken into account, the DC conductivity decreased to a value that is comparable to that of the unfilled polymer.

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Accepted/In Press date: 22 April 2016
Published date: 3 July 2016
Venue - Dates: International Conference on Dielectrics (ICD), France, 2016-07-03 - 2016-07-07
Organisations: EEE

Identifiers

Local EPrints ID: 397745
URI: https://eprints.soton.ac.uk/id/eprint/397745
PURE UUID: c9d98474-2e7d-458e-b355-2dabc67df6db
ORCID for Alun Vaughan: ORCID iD orcid.org/0000-0002-0535-513X
ORCID for Thomas Andritsch: ORCID iD orcid.org/0000-0002-3462-022X

Catalogue record

Date deposited: 05 Jul 2016 11:34
Last modified: 15 Aug 2019 00:49

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