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Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices

Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices
Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices
TiO2 thin films have drawn a lot of attention for their application in emerging memory devices, such as resistive random access memory (ReRAM). However, TiO2 ReRAM still faces reliability issues, including poor endurance, large device-to-device and cycle-to-cycle variability of switching parameters and low yields. Moreover, high electroforming voltages have been often associated with irreversible damage to devices. Doping of TiO2 has been employed as a strategy for overcoming these issues. Therefore in this work, we used Al as a dopant in TiO2 thin films to investigate its effect on electroforming and switching voltages of ReRAM devices. Conductive atomic force microscopy (C-AFM) measurements on these thin films, suggested that Al doping decreased the switching voltages compared to the undoped thin films. This result was confirmed by pulse voltage sweeping of ReRAM devices employing the same doped thin films. The Al-doped devices were on average electroforming at -5.7 V, compared to -6.4 V for the undoped ones, and they were switching with potentials as low as ±0.9 V. These findings suggest a potential pathway for implementing low-power ReRAM systems
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Trapatseli, Maria, Khiat, Ali, Serb, Alexander, Carta, Daniela and Prodromakis, Themis (2016) Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices. E-MRS Spring Meeting, France. 02 - 05 May 2016.

Record type: Conference or Workshop Item (Poster)

Abstract

TiO2 thin films have drawn a lot of attention for their application in emerging memory devices, such as resistive random access memory (ReRAM). However, TiO2 ReRAM still faces reliability issues, including poor endurance, large device-to-device and cycle-to-cycle variability of switching parameters and low yields. Moreover, high electroforming voltages have been often associated with irreversible damage to devices. Doping of TiO2 has been employed as a strategy for overcoming these issues. Therefore in this work, we used Al as a dopant in TiO2 thin films to investigate its effect on electroforming and switching voltages of ReRAM devices. Conductive atomic force microscopy (C-AFM) measurements on these thin films, suggested that Al doping decreased the switching voltages compared to the undoped thin films. This result was confirmed by pulse voltage sweeping of ReRAM devices employing the same doped thin films. The Al-doped devices were on average electroforming at -5.7 V, compared to -6.4 V for the undoped ones, and they were switching with potentials as low as ±0.9 V. These findings suggest a potential pathway for implementing low-power ReRAM systems

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More information

Accepted/In Press date: 1 March 2016
Published date: May 2016
Venue - Dates: E-MRS Spring Meeting, France, 2016-05-02 - 2016-05-05
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 397800
URI: https://eprints.soton.ac.uk/id/eprint/397800
PURE UUID: 16cee0be-9351-4f53-a504-a0f1bd450fa8
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 15 Jul 2016 07:33
Last modified: 20 Nov 2018 01:30

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