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Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates
Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates
Pt/TiOx/Pt resistive switching (RS) devices are considered to be amongst the best candidates for post-flash non-volatile memory (NVM) and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible resistive random access memory (RRAM) technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiOx/Pt stack onto flexible Parylene-C substrates. The devices were electrically characterized, exhibiting both digital and analog memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in implantable sensors and bio-compatible neural interfaces. Data for the paper by of the same name published in Nanotechnology, Volume 28, Number 2 doi:10.1088/1361-6528/28/2/025303
University of Southampton
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Khiat, Ali, Cortese, Simone, Serb, Alexantrou and Prodromakis, Themistoklis (2016) Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates. University of Southampton [Dataset]

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Abstract

Pt/TiOx/Pt resistive switching (RS) devices are considered to be amongst the best candidates for post-flash non-volatile memory (NVM) and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible resistive random access memory (RRAM) technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiOx/Pt stack onto flexible Parylene-C substrates. The devices were electrically characterized, exhibiting both digital and analog memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in implantable sensors and bio-compatible neural interfaces. Data for the paper by of the same name published in Nanotechnology, Volume 28, Number 2 doi:10.1088/1361-6528/28/2/025303

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More information

Published date: 2016
Organisations: Nanoelectronics and Nanotechnology, Electronics & Computer Science
Projects:
Reliably unreliable nanotechnologies
Funded by: UNSPECIFIED (EP/K017829/1)
2 September 2013 to 1 September 2018

Identifiers

Local EPrints ID: 397944
URI: https://eprints.soton.ac.uk/id/eprint/397944
PURE UUID: 352fb0f0-a4f4-4915-9210-950e30a2a550
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 24 Jan 2017 12:00
Last modified: 06 Jun 2018 12:24

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Contributors

Creator: Ali Khiat
Creator: Simone Cortese
Creator: Alexantrou Serb

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