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Engineering the switching dynamics of TiOx-based RRAM with Al doping

Engineering the switching dynamics of TiOx-based RRAM with Al doping
Engineering the switching dynamics of TiOx-based RRAM with Al doping
Titanium oxide (TiOx) has attracted a lot of attention as an active material for Resistive Random Access Memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics and ultimately device failure. Electroforming (EF) has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching (RS) threshold voltages of undoped and Al-doped TiOx thin films were first assessed by Conductive Atomic Force Microscopy (C-AFM). The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.Dataset for: Trapatseli, Maria, Khiat, Ali and Cortese, Simone et al. (2016) Engineering the switching dynamics of TiOx-based RRAM with Al doping. Journal of Applied Physics, 120, 025108.
University of Southampton
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
CARTA, DANIELA
120de978-2aaa-4b4d-bf5f-3625c503040d
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
CARTA, DANIELA
120de978-2aaa-4b4d-bf5f-3625c503040d
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Trapatseli, Maria, Khiat, Ali, Cortese, Simone, Serb, Alexantrou, CARTA, DANIELA and Prodromakis, Themistoklis (2016) Engineering the switching dynamics of TiOx-based RRAM with Al doping. University of Southampton doi:10.5258/SOTON/398045 [Dataset]

Record type: Dataset

Abstract

Titanium oxide (TiOx) has attracted a lot of attention as an active material for Resistive Random Access Memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics and ultimately device failure. Electroforming (EF) has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching (RS) threshold voltages of undoped and Al-doped TiOx thin films were first assessed by Conductive Atomic Force Microscopy (C-AFM). The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.Dataset for: Trapatseli, Maria, Khiat, Ali and Cortese, Simone et al. (2016) Engineering the switching dynamics of TiOx-based RRAM with Al doping. Journal of Applied Physics, 120, 025108.

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Trapatseli_JAP_dataset.xlsx - Dataset
Available under License Creative Commons Attribution.
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More information

Published date: 2016
Organisations: Electronics & Computer Science, Nanoelectronics and Nanotechnology
Projects:
Reliably unreliable nanotechnologies
Funded by: UNSPECIFIED (EP/K017829/1)
2 September 2013 to 1 September 2018

Identifiers

Local EPrints ID: 398045
URI: https://eprints.soton.ac.uk/id/eprint/398045
PURE UUID: b2125eb2-c19f-4e2c-8781-e9392b8e42dd
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 08 Feb 2017 16:58
Last modified: 06 Jun 2018 12:24

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Contributors

Creator: Maria Trapatseli
Creator: Ali Khiat
Creator: Simone Cortese
Creator: Alexantrou Serb
Creator: DANIELA CARTA

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