Investigations into the growth of GaN nanowires by MOCVD using azidotrimethylsilane as nitrogen source
Investigations into the growth of GaN nanowires by MOCVD using azidotrimethylsilane as nitrogen source
Gallium trichloride (GaCl3) and azidotrimethylsilane (CH3)3SiN3 were employed as alternatives gallium and nitrogen precursors respectively in the growth of GaN nanowires via a metal-organic chemical vapor deposition (MOCVD) system. Au pre-deposition on Si (100) substrate was using as catalysis seed to grown of GaN nanowires. X-Ray, FE-SEM and AFM analyses reveal that nanowires grown at temperature 1050 ºC present morphology characteristic to model VLS. Scanning electron microscopy reveal a surface morphology made up of wurzite that suggests that wires growth involve a melting process. A nucleation and growth mechanism, involving the congruent melting clusters of precursor molecules on the hot substrate surface, is therefore invoked to explain these observations. We attributed the improved growth behavior to the nearer-to-equilibrium growth and may be close to local thermodynamic equilibrium.
1483-1489
Núñez-Velázquez, Martin
3c102956-ac51-4d02-9fe6-6628557cfbff
Lopez, Fernando Juárez
bf77f25a-f02f-48e1-8993-d5e1846e0f1f
27 February 2014
Núñez-Velázquez, Martin
3c102956-ac51-4d02-9fe6-6628557cfbff
Lopez, Fernando Juárez
bf77f25a-f02f-48e1-8993-d5e1846e0f1f
Núñez-Velázquez, Martin and Lopez, Fernando Juárez
(2014)
Investigations into the growth of GaN nanowires by MOCVD using azidotrimethylsilane as nitrogen source.
Advanced Materials Research, 875-877, .
(doi:10.4028/www.scientific.net/AMR.875-877.1483).
Abstract
Gallium trichloride (GaCl3) and azidotrimethylsilane (CH3)3SiN3 were employed as alternatives gallium and nitrogen precursors respectively in the growth of GaN nanowires via a metal-organic chemical vapor deposition (MOCVD) system. Au pre-deposition on Si (100) substrate was using as catalysis seed to grown of GaN nanowires. X-Ray, FE-SEM and AFM analyses reveal that nanowires grown at temperature 1050 ºC present morphology characteristic to model VLS. Scanning electron microscopy reveal a surface morphology made up of wurzite that suggests that wires growth involve a melting process. A nucleation and growth mechanism, involving the congruent melting clusters of precursor molecules on the hot substrate surface, is therefore invoked to explain these observations. We attributed the improved growth behavior to the nearer-to-equilibrium growth and may be close to local thermodynamic equilibrium.
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Published date: 27 February 2014
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 398341
URI: http://eprints.soton.ac.uk/id/eprint/398341
PURE UUID: 937617c0-4d34-423c-86db-5f1ca48f628b
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Date deposited: 22 Jul 2016 10:37
Last modified: 15 Mar 2024 01:33
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Author:
Martin Núñez-Velázquez
Author:
Fernando Juárez Lopez
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