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Cavity-enhanced measurements of defect spins in silicon carbide

Cavity-enhanced measurements of defect spins in silicon carbide
Cavity-enhanced measurements of defect spins in silicon carbide
The identification of new solid-state defect-qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here, we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color-center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic-resonance signal intensities, and optical spin initialization rates. We observe an up to a factor of 30 increase in the photoluminescence and optically detected magnetic-resonance signals from Ky5 color centers excited by cavity-resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of 2. Furthermore, we show that the 705-fold reduction in excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to overcome inhomogenous broadening in order to facilitate the study of defect-qubit subensemble properties. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color-center defect qubits to enable applications in quantum information and sensing
1-8
Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Calusine, Greg
cb7eb840-0b6b-4f81-9ee9-489b3c096b5d
Awschalom, David D.
b92ebf4f-d280-49a4-858a-c70f2cabdc60
Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Calusine, Greg
cb7eb840-0b6b-4f81-9ee9-489b3c096b5d
Awschalom, David D.
b92ebf4f-d280-49a4-858a-c70f2cabdc60

Politi, Alberto, Calusine, Greg and Awschalom, David D. (2016) Cavity-enhanced measurements of defect spins in silicon carbide. Physical Review Applied, 6 (14019), 1-8. (doi:10.1103/PhysRevApplied.6.014019).

Record type: Article

Abstract

The identification of new solid-state defect-qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here, we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color-center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic-resonance signal intensities, and optical spin initialization rates. We observe an up to a factor of 30 increase in the photoluminescence and optically detected magnetic-resonance signals from Ky5 color centers excited by cavity-resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of 2. Furthermore, we show that the 705-fold reduction in excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to overcome inhomogenous broadening in order to facilitate the study of defect-qubit subensemble properties. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color-center defect qubits to enable applications in quantum information and sensing

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Accepted/In Press date: 24 June 2016
e-pub ahead of print date: 29 July 2016
Organisations: Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 399261
URI: http://eprints.soton.ac.uk/id/eprint/399261
PURE UUID: 9958b5f8-ee1d-4881-9fdc-005004906c2a
ORCID for Alberto Politi: ORCID iD orcid.org/0000-0002-3668-9474

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Date deposited: 11 Aug 2016 12:10
Last modified: 07 Oct 2020 02:04

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Contributors

Author: Alberto Politi ORCID iD
Author: Greg Calusine
Author: David D. Awschalom

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