Emerging CVD technology for functional chalcogenide materials
Emerging CVD technology for functional chalcogenide materials
Chalcogenide materials, formed from metallic alloys of S, Se, and Te, have received considerable attention for applications in optoelectronic devices over the past two decades in part due to their unique properties such as high infrared transparency, strong photosensitivity, large nonlinearity, capability of high rare-earth doping, and ability to readily change phase. Thin amorphous chalcogenide films are of particular interest because their diverse active properties are easily exploited in integrated planar optical circuits, as well as for memory and other optoelectronic applications. More recently, transition metal dichalcogenides (TMDCs), two-dimensional (2D) layered materials, such as MoS2, MoSe2, WS2, and WSe2 have become a noteworthy complimentary material to field. Sharing many of the properties of graphene they also offer properties that are unattainable in 2D graphene including a tunable bandgap; easily modified through both composition and the number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. In this talk we describe our development of functional chalcogenide materials by the chemical vapour deposition technology and discuss their potential applications.
Huang, Chung-Che
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Alzaidy, Ghadah
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Aspiotis, Nikolaos
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Cui, Qingsong
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Weatherby, Ed
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Craig, Chris
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Morgan, Katrina
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Zeimpekis, Ioannis
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Hewak, Daniel
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Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Alzaidy, Ghadah
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Aspiotis, Nikolaos
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Cui, Qingsong
246f6604-fcb0-4052-b00b-677b08739083
Weatherby, Ed
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Craig, Chris
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Morgan, Katrina
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Zeimpekis, Ioannis
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Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, Chung-Che, Alzaidy, Ghadah, Aspiotis, Nikolaos, Cui, Qingsong, Weatherby, Ed, Craig, Chris, Morgan, Katrina, Zeimpekis, Ioannis and Hewak, Daniel
(2016)
Emerging CVD technology for functional chalcogenide materials.
Vacuum Symposium: Functional Thin Films, Coventry, United Kingdom.
12 - 13 Oct 2016.
Record type:
Conference or Workshop Item
(Other)
Abstract
Chalcogenide materials, formed from metallic alloys of S, Se, and Te, have received considerable attention for applications in optoelectronic devices over the past two decades in part due to their unique properties such as high infrared transparency, strong photosensitivity, large nonlinearity, capability of high rare-earth doping, and ability to readily change phase. Thin amorphous chalcogenide films are of particular interest because their diverse active properties are easily exploited in integrated planar optical circuits, as well as for memory and other optoelectronic applications. More recently, transition metal dichalcogenides (TMDCs), two-dimensional (2D) layered materials, such as MoS2, MoSe2, WS2, and WSe2 have become a noteworthy complimentary material to field. Sharing many of the properties of graphene they also offer properties that are unattainable in 2D graphene including a tunable bandgap; easily modified through both composition and the number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. In this talk we describe our development of functional chalcogenide materials by the chemical vapour deposition technology and discuss their potential applications.
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e-pub ahead of print date: 13 October 2016
Venue - Dates:
Vacuum Symposium: Functional Thin Films, Coventry, United Kingdom, 2016-10-12 - 2016-10-13
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 400303
URI: http://eprints.soton.ac.uk/id/eprint/400303
PURE UUID: 69653812-ec3c-4679-9bb3-223af67d09d3
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Date deposited: 13 Sep 2016 14:39
Last modified: 21 Sep 2024 01:47
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Contributors
Author:
Chung-Che Huang
Author:
Ghadah Alzaidy
Author:
Nikolaos Aspiotis
Author:
Qingsong Cui
Author:
Ed Weatherby
Author:
Chris Craig
Author:
Katrina Morgan
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