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High density crossbar arrays with sub- 15 nm single cells via liftoff process only

High density crossbar arrays with sub- 15 nm single cells via liftoff process only
High density crossbar arrays with sub- 15 nm single cells via liftoff process only
Emerging nano-scale technologies are pushing the fabrication boundaries at their limits, for leveraging an even higher density of nano-devices towards reaching 4F2/cell footprint in 3D arrays. Here, we study the liftoff process limits to achieve extreme dense nanowires while ensuring preservation of thin film quality. The proposed method is optimized for attaining a multiple layer fabrication to reliably achieve 3D nano-device stacks of 32?×?32 nanowire arrays across 6-inch wafer, using electron beam lithography at 100?kV and polymethyl methacrylate (PMMA) resist at different thicknesses. The resist thickness and its geometric profile after development were identified to be the major limiting factors, and suggestions for addressing these issues are provided. Multiple layers were successfully achieved to fabricate arrays of 1 Ki cells that have sub- 15?nm nanowires distant by 28?nm across 6-inch wafer.
1-8
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Ayliffe, Peter
a16342dc-c363-48bc-89f0-471bd9d90d74
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Ayliffe, Peter
a16342dc-c363-48bc-89f0-471bd9d90d74
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Khiat, Ali, Ayliffe, Peter and Prodromakis, Themis (2016) High density crossbar arrays with sub- 15 nm single cells via liftoff process only. Scientific Reports, 6 (32614), 1-8. (doi:10.1038/srep32614).

Record type: Article

Abstract

Emerging nano-scale technologies are pushing the fabrication boundaries at their limits, for leveraging an even higher density of nano-devices towards reaching 4F2/cell footprint in 3D arrays. Here, we study the liftoff process limits to achieve extreme dense nanowires while ensuring preservation of thin film quality. The proposed method is optimized for attaining a multiple layer fabrication to reliably achieve 3D nano-device stacks of 32?×?32 nanowire arrays across 6-inch wafer, using electron beam lithography at 100?kV and polymethyl methacrylate (PMMA) resist at different thicknesses. The resist thickness and its geometric profile after development were identified to be the major limiting factors, and suggestions for addressing these issues are provided. Multiple layers were successfully achieved to fabricate arrays of 1 Ki cells that have sub- 15?nm nanowires distant by 28?nm across 6-inch wafer.

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More information

Accepted/In Press date: 11 August 2016
e-pub ahead of print date: 2 September 2016
Published date: 2 September 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 400385
URI: https://eprints.soton.ac.uk/id/eprint/400385
PURE UUID: 850fbf98-ad50-457c-84b6-a03dd1d4a653
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 15 Sep 2016 14:13
Last modified: 03 Dec 2019 01:36

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Contributors

Author: Ali Khiat
Author: Peter Ayliffe

University divisions

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