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Low temperature silicon nitride waveguides for multilayer platforms

Low temperature silicon nitride waveguides for multilayer platforms
Low temperature silicon nitride waveguides for multilayer platforms
Several 3D multilayer silicon photonics platforms have been proposed to provide densely integrated structures for complex integrated circuits. Amongst these platforms, great interest has been given to the inclusion of silicon nitride layers to achieve low propagation losses due to their capacity of providing tight optical confinement with low scattering losses in a wide spectral range. However, none of the proposed platforms have demonstrated the integration of active devices. The problem is that typically low loss silicon nitride layers have been fabricated with LPCVD which involves high processing temperatures (<1000 ºC) that affect metallisation and doping processes that are sensitive to temperatures above 400ºC. As a result, we have investigated ammonia-free PECVD and HWCVD processes to obtain high quality silicon nitride films with reduced hydrogen content at low temperatures. Several deposition recipes were defined through a design of experiments methodology in which different combinations of deposition parameters were tested to optimise the quality and the losses of the deposited layers. The physical, chemical and optical properties of the deposited materials were characterised using different techniques including ellipsometry, SEM, FTIR, AFM and the waveguide loss cut-back method. Silicon nitride layers with hydrogen content between 10-20%, losses below 10dB/cm and high material quality were obtained with the ammonia-free recipe. Similarly, it was demonstrated that HWCVD has the potential to fabricate waveguides with low losses due to its capacity of yielding hydrogen contents <10% and roughness <1.5nm.
98911T-98911T
Domínguez Bucio, Thalía
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Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2

Domínguez Bucio, Thalía, Tarazona, Antulio, Khokhar, Ali, Mashanovich, Goran and Gardes, Frederic (2016) Low temperature silicon nitride waveguides for multilayer platforms. SPIE Photonics Europe 2016, Brussels, Belgium. 03 - 07 Apr 2016. 98911T-98911T . (doi:10.1117/12.2227590).

Record type: Conference or Workshop Item (Paper)

Abstract

Several 3D multilayer silicon photonics platforms have been proposed to provide densely integrated structures for complex integrated circuits. Amongst these platforms, great interest has been given to the inclusion of silicon nitride layers to achieve low propagation losses due to their capacity of providing tight optical confinement with low scattering losses in a wide spectral range. However, none of the proposed platforms have demonstrated the integration of active devices. The problem is that typically low loss silicon nitride layers have been fabricated with LPCVD which involves high processing temperatures (<1000 ºC) that affect metallisation and doping processes that are sensitive to temperatures above 400ºC. As a result, we have investigated ammonia-free PECVD and HWCVD processes to obtain high quality silicon nitride films with reduced hydrogen content at low temperatures. Several deposition recipes were defined through a design of experiments methodology in which different combinations of deposition parameters were tested to optimise the quality and the losses of the deposited layers. The physical, chemical and optical properties of the deposited materials were characterised using different techniques including ellipsometry, SEM, FTIR, AFM and the waveguide loss cut-back method. Silicon nitride layers with hydrogen content between 10-20%, losses below 10dB/cm and high material quality were obtained with the ammonia-free recipe. Similarly, it was demonstrated that HWCVD has the potential to fabricate waveguides with low losses due to its capacity of yielding hydrogen contents <10% and roughness <1.5nm.

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More information

e-pub ahead of print date: 3 April 2016
Published date: 13 May 2016
Venue - Dates: SPIE Photonics Europe 2016, Brussels, Belgium, 2016-04-03 - 2016-04-07
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 400414
URI: https://eprints.soton.ac.uk/id/eprint/400414
PURE UUID: 80e67a0c-42c4-4fc2-a8ba-e6131fd9e88f
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

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Date deposited: 16 Sep 2016 08:55
Last modified: 19 Nov 2019 01:23

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