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Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy

Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy
Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy
We investigate local doping concentration modulation of graphene flakes on a SiO2/Si substrate that has been exposed to the same chemicals in device fabrication using tip-enhanced Raman spectroscopy (TERS). By spectral line scanning across the edge of graphene, it is observed that the D peak enhancement is localized in the vicinity of the edge boundary, and the TERS spatial resolution of ~228 nm is obtained. In the TERS spectra significant peak shifts of both the G and 2D peaks are observed more than 7 cm-1 across the hump on graphene within the distance of 1 µm, while both G and 2D peaks are shifted less than 2 cm-1 in the far-field spectra. This indicates that the modulation of hole doping concentration in close proximity on graphene/SiO2/Si can be probed by using TERS surpassing the resolution of a laser diffraction limit of conventional micro Raman spectroscopy.
0008-6223
67-73
Iwasaki, Takuya
b9de92ae-a490-4cb3-8e39-d4ad9d8368f4
Zelai, Taharh
dae04f28-259f-4b97-9f47-dadf2a663b51
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Iwasaki, Takuya
b9de92ae-a490-4cb3-8e39-d4ad9d8368f4
Zelai, Taharh
dae04f28-259f-4b97-9f47-dadf2a663b51
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Iwasaki, Takuya, Zelai, Taharh, Ye, Sheng, Tsuchiya, Yoshishige, Chong, Harold M.H. and Mizuta, Hiroshi (2017) Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy. Carbon, 111, 67-73. (doi:10.1016/j.carbon.2016.09.068).

Record type: Article

Abstract

We investigate local doping concentration modulation of graphene flakes on a SiO2/Si substrate that has been exposed to the same chemicals in device fabrication using tip-enhanced Raman spectroscopy (TERS). By spectral line scanning across the edge of graphene, it is observed that the D peak enhancement is localized in the vicinity of the edge boundary, and the TERS spatial resolution of ~228 nm is obtained. In the TERS spectra significant peak shifts of both the G and 2D peaks are observed more than 7 cm-1 across the hump on graphene within the distance of 1 µm, while both G and 2D peaks are shifted less than 2 cm-1 in the far-field spectra. This indicates that the modulation of hole doping concentration in close proximity on graphene/SiO2/Si can be probed by using TERS surpassing the resolution of a laser diffraction limit of conventional micro Raman spectroscopy.

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TERS_manuscript_Carbon_Revised_Final.pdf - Accepted Manuscript
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More information

Accepted/In Press date: 27 September 2016
e-pub ahead of print date: 27 September 2016
Published date: January 2017
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 400824
URI: http://eprints.soton.ac.uk/id/eprint/400824
ISSN: 0008-6223
PURE UUID: fa50f096-95ff-442d-8e5b-e9f9426f424c
ORCID for Harold M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 27 Sep 2016 09:11
Last modified: 18 Feb 2021 17:10

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Contributors

Author: Takuya Iwasaki
Author: Taharh Zelai
Author: Sheng Ye
Author: Yoshishige Tsuchiya
Author: Harold M.H. Chong ORCID iD
Author: Hiroshi Mizuta

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