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On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

On the origin of resistive switching volatility in Ni/TiO2/Ni stacks
On the origin of resistive switching volatility in Ni/TiO2/Ni stacks
Resistive switching and resistive random access memories have attracted huge interest for next generation nonvolatile memory applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the toggling between two distinct resistance states, usually a High Resistive State (HRS) and a Low Resistive State (LRS), is an intrinsic non-volatile phenomenon with the two states being thermodynamically stable. TiO2 is one of the most common materials known to support non-volatile RS. In this paper, we report a volatile resistive switching in a titanium dioxide thin film sandwiched by two nickel electrodes. The aim of this work is to understand the underlying physical mechanism that triggers the volatile effect, which is ascribed to the presence of a NiO layer at the bottom interface. The NiO layer alters the equilibrium between electric field driven filament formation and thermal enhanced ion diffusion, resulting in the volatile behaviour. Although the volatility is not ideal for non-volatile memory applications, it shows merit for access devices in crossbar arrays due to its high LRS/HRS ratio, which are also briefly discussed.
0021-8979
1-8
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Cortese, Simone, Trapatseli, Maria, Khiat, Ali and Prodromakis, Themis (2016) On the origin of resistive switching volatility in Ni/TiO2/Ni stacks. Journal of Applied Physics, 120 (65104), 1-8. (doi:10.1063/1.4960690).

Record type: Article

Abstract

Resistive switching and resistive random access memories have attracted huge interest for next generation nonvolatile memory applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the toggling between two distinct resistance states, usually a High Resistive State (HRS) and a Low Resistive State (LRS), is an intrinsic non-volatile phenomenon with the two states being thermodynamically stable. TiO2 is one of the most common materials known to support non-volatile RS. In this paper, we report a volatile resistive switching in a titanium dioxide thin film sandwiched by two nickel electrodes. The aim of this work is to understand the underlying physical mechanism that triggers the volatile effect, which is ascribed to the presence of a NiO layer at the bottom interface. The NiO layer alters the equilibrium between electric field driven filament formation and thermal enhanced ion diffusion, resulting in the volatile behaviour. Although the volatility is not ideal for non-volatile memory applications, it shows merit for access devices in crossbar arrays due to its high LRS/HRS ratio, which are also briefly discussed.

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Accepted/In Press date: 28 July 2016
Published date: 16 August 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 401214
URI: https://eprints.soton.ac.uk/id/eprint/401214
ISSN: 0021-8979
PURE UUID: 9447a4d7-8e0e-4da1-91dd-a8ae41ad09fd
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 10 Oct 2016 15:27
Last modified: 10 Dec 2019 01:35

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Contributors

Author: Simone Cortese
Author: Maria Trapatseli
Author: Ali Khiat

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