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Junction formation with HWCVD and TCAD model of an epitaxial back-contact solar cell

Junction formation with HWCVD and TCAD model of an epitaxial back-contact solar cell
Junction formation with HWCVD and TCAD model of an epitaxial back-contact solar cell
In this paper, we present morphological and electrical characteristics of a junction formed of Si p-type films deposited on an n-type silicon wafer using a hot wire chemical vapor deposition (HWCVD) tool. We describe the fabrication process and study the influence of diborane flow and postprocess annealing in improving junction characteristics. Our morphological studies undertaken using atomic force microscopy show that the initial deposition suffered from voids rather than being a uniform film; however, this improves significantly under our annealing treatment. The improvement in morphology was observed in the electrical characteristics, with estimated Voc doubling and rectification of the junction improving by several orders of magnitude. Fitting of the current-voltage curves to a two-diode model showed that increasing the diborane flow in the process helps reduce the saturation current and ideality factors, while increasing the shunt resistance. Electrochemical capacitance-voltage (ECV) and quasi-steady-state photoconductance measurements are used to characterize the deposited films further. A solar cell device with a silicon epitaxy emitter is modeled using industry-standard 3-D modeling tools and input parameters from experimental data, and the impact of defects is studied. A potential efficiency approaching 25% is shown to be feasible for an optimized device.
1-7
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Nawabjan, Amirjan
9e085c58-16c0-4ec5-bef2-28b0b30a84a0
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Bagnall, Darren M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Nawabjan, Amirjan
9e085c58-16c0-4ec5-bef2-28b0b30a84a0
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Bagnall, Darren M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8

Rahman, Tasmiat, Nawabjan, Amirjan, Tarazona, Antulio, Bagnall, Darren M. and Boden, Stuart (2016) Junction formation with HWCVD and TCAD model of an epitaxial back-contact solar cell. IEEE Journal of Photovoltaics, 6 (6), 1-7. (doi:10.1109/JPHOTOV.2016.2598277).

Record type: Article

Abstract

In this paper, we present morphological and electrical characteristics of a junction formed of Si p-type films deposited on an n-type silicon wafer using a hot wire chemical vapor deposition (HWCVD) tool. We describe the fabrication process and study the influence of diborane flow and postprocess annealing in improving junction characteristics. Our morphological studies undertaken using atomic force microscopy show that the initial deposition suffered from voids rather than being a uniform film; however, this improves significantly under our annealing treatment. The improvement in morphology was observed in the electrical characteristics, with estimated Voc doubling and rectification of the junction improving by several orders of magnitude. Fitting of the current-voltage curves to a two-diode model showed that increasing the diborane flow in the process helps reduce the saturation current and ideality factors, while increasing the shunt resistance. Electrochemical capacitance-voltage (ECV) and quasi-steady-state photoconductance measurements are used to characterize the deposited films further. A solar cell device with a silicon epitaxy emitter is modeled using industry-standard 3-D modeling tools and input parameters from experimental data, and the impact of defects is studied. A potential efficiency approaching 25% is shown to be feasible for an optimized device.

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Accepted/In Press date: 22 July 2016
Published date: November 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 401865
URI: https://eprints.soton.ac.uk/id/eprint/401865
PURE UUID: aea1027d-99f0-456e-a3c3-26f5e1a8a2ed
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828

Catalogue record

Date deposited: 20 Oct 2016 15:21
Last modified: 31 Jul 2019 00:42

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Contributors

Author: Tasmiat Rahman
Author: Amirjan Nawabjan
Author: Darren M. Bagnall
Author: Stuart Boden ORCID iD

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