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The effects of semicon on space charge behavior under different temperature conditions for HVDC cable insulation

The effects of semicon on space charge behavior under different temperature conditions for HVDC cable insulation
The effects of semicon on space charge behavior under different temperature conditions for HVDC cable insulation
One of the major concerns related to HVDC applications is the presence of space charge within the dielectrics, which distorts the electric field distribution and contributes to accelerated ageing and consequent failure of the cable insulation. In this paper, an attempt is made to explore the space charge characteristics using different electrode materials and temperature conditions to highlight the variation in space charge formation and distribution in the system using pulsed electro acoustic (PEA) technique. To simulate a real cable manufacturing process, XLPE insulation was sandwiched between two layers of thermal bonded semicon material. The experimental results revealed that the semiconductive materials has a greater influence on the space charge formation. It was found the electrode materials play a vital role in determining the charge distribution in the insulation and significant dependence on the electrode materials under the same applied stress and temperature conditions. Thermal bonded semicon samples have a stronger charge injection and greater charge amount within the bulk and high temperature can greatly increase the charge mobility for both polarities as well as enhances charge injection. These findings are discussed in conjunction with unbonded sample (conventional setup) for the space charge measurements.
Hao, M.
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Fazal, A.
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Vaughan, A.
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Chen, G.
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Wang, H.
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Zhang, C.
fa728450-fee5-44d4-ac66-25b57611c58d
Zhou, Y.
a5398d19-1c29-40ca-9c74-72a1fa2db5e6
Hao, M.
fb7006e0-07c0-46f5-9279-e30a7d3bd614
Fazal, A.
926d3b48-d11b-45b1-b922-5c2e8e3ba5fd
Vaughan, A.
6d813b66-17f9-4864-9763-25a6d659d8a3
Chen, G.
3de45a9c-6c9a-4bcb-90c3-d7e26be21819
Wang, H.
d23f04f1-a300-4744-bd98-2df77c7047df
Zhang, C.
fa728450-fee5-44d4-ac66-25b57611c58d
Zhou, Y.
a5398d19-1c29-40ca-9c74-72a1fa2db5e6

Hao, M., Fazal, A., Vaughan, A., Chen, G., Wang, H., Zhang, C. and Zhou, Y. (2016) The effects of semicon on space charge behavior under different temperature conditions for HVDC cable insulation. 2nd International Conference on HVDC - (HVDC2016), Shanghai,, China. 24 - 26 Oct 2016. 6 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

One of the major concerns related to HVDC applications is the presence of space charge within the dielectrics, which distorts the electric field distribution and contributes to accelerated ageing and consequent failure of the cable insulation. In this paper, an attempt is made to explore the space charge characteristics using different electrode materials and temperature conditions to highlight the variation in space charge formation and distribution in the system using pulsed electro acoustic (PEA) technique. To simulate a real cable manufacturing process, XLPE insulation was sandwiched between two layers of thermal bonded semicon material. The experimental results revealed that the semiconductive materials has a greater influence on the space charge formation. It was found the electrode materials play a vital role in determining the charge distribution in the insulation and significant dependence on the electrode materials under the same applied stress and temperature conditions. Thermal bonded semicon samples have a stronger charge injection and greater charge amount within the bulk and high temperature can greatly increase the charge mobility for both polarities as well as enhances charge injection. These findings are discussed in conjunction with unbonded sample (conventional setup) for the space charge measurements.

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A-Fazal-HVDC2016.pdf - Accepted Manuscript
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More information

Accepted/In Press date: 15 September 2016
e-pub ahead of print date: October 2016
Venue - Dates: 2nd International Conference on HVDC - (HVDC2016), Shanghai,, China, 2016-10-24 - 2016-10-26
Organisations: EEE

Identifiers

Local EPrints ID: 402450
URI: http://eprints.soton.ac.uk/id/eprint/402450
PURE UUID: 847fa939-ac5b-424b-b6b7-c3eb73deca02
ORCID for A. Vaughan: ORCID iD orcid.org/0000-0002-0535-513X

Catalogue record

Date deposited: 09 Nov 2016 16:22
Last modified: 18 Feb 2021 16:55

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