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Downscaled graphene nanodevices: fabrication and ab initio study

Downscaled graphene nanodevices: fabrication and ab initio study
Downscaled graphene nanodevices: fabrication and ab initio study
In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He ion beam. We then study the effects of the He ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.
Mizuta, Hiroshi
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Moktadiri, Zakaria
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Boden, Stuart
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Kalhori, Nima
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Hang, Shuojin
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Schmidt, Marek
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Cuong, Nguyen Tien
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Chi, Dam Hieu
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Otsuka, Nobuo
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Manoharan, Muruagnathan
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Tsuchiya, Yoshishige
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Chong, Harold
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Rutt, Harvey
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Bagnall, Darren
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Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Moktadiri, Zakaria
230f45ee-2407-4b4c-a38b-c336a703fe69
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Kalhori, Nima
58d6cd08-a5ec-4411-b012-208111c73478
Hang, Shuojin
81fcaaf8-4887-4c09-ae9d-0771be618f0b
Schmidt, Marek
8515ec8d-eb84-4721-93b2-11ce69444d72
Cuong, Nguyen Tien
17ccc387-379e-41c7-9522-d52e09440a61
Chi, Dam Hieu
d603e14a-685b-440b-84bf-9a6e48cd39f7
Otsuka, Nobuo
91f485aa-a0b7-4f80-87ee-c7b154612413
Manoharan, Muruagnathan
2873419c-d20a-4de0-b206-3e189f7accbd
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Bagnall, Darren
5d84abc8-77e5-43f7-97cb-e28533f25ef1

Mizuta, Hiroshi, Moktadiri, Zakaria, Boden, Stuart, Kalhori, Nima, Hang, Shuojin, Schmidt, Marek, Cuong, Nguyen Tien, Chi, Dam Hieu, Otsuka, Nobuo, Manoharan, Muruagnathan, Tsuchiya, Yoshishige, Chong, Harold, Rutt, Harvey and Bagnall, Darren (2012) Downscaled graphene nanodevices: fabrication and ab initio study. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), China. 29 Oct - 01 Nov 2012. 4 pp . (doi:10.1109/ICSICT.2012.6467940).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He ion beam. We then study the effects of the He ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.

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More information

e-pub ahead of print date: 2012
Venue - Dates: IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), China, 2012-10-29 - 2012-11-01
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 402869
URI: https://eprints.soton.ac.uk/id/eprint/402869
PURE UUID: eedd570c-f2f9-476f-83d1-762049c546fb
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 29 Nov 2016 16:45
Last modified: 20 Jul 2019 00:57

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Contributors

Author: Hiroshi Mizuta
Author: Zakaria Moktadiri
Author: Stuart Boden ORCID iD
Author: Nima Kalhori
Author: Shuojin Hang
Author: Marek Schmidt
Author: Nguyen Tien Cuong
Author: Dam Hieu Chi
Author: Nobuo Otsuka
Author: Muruagnathan Manoharan
Author: Yoshishige Tsuchiya
Author: Harold Chong ORCID iD
Author: Harvey Rutt
Author: Darren Bagnall

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