Charge transport model in nanodielectric composites based on quantum tunnelling mechanism and dual-level traps
Charge transport model in nanodielectric composites based on quantum tunnelling mechanism and dual-level traps
Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the
thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.
1-5
Li, Guochang
7a26eb97-9f95-4264-86f6-c38555375df4
Chen, George
3de45a9c-6c9a-4bcb-90c3-d7e26be21819
Li, Shengtao
e2d199c9-1c0c-40c8-aefb-ff3b3d8e4799
8 August 2016
Li, Guochang
7a26eb97-9f95-4264-86f6-c38555375df4
Chen, George
3de45a9c-6c9a-4bcb-90c3-d7e26be21819
Li, Shengtao
e2d199c9-1c0c-40c8-aefb-ff3b3d8e4799
Li, Guochang, Chen, George and Li, Shengtao
(2016)
Charge transport model in nanodielectric composites based on quantum tunnelling mechanism and dual-level traps.
Applied Physics Letters, 109 (62901), .
(doi:10.1063/1.4960638).
Abstract
Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the
thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.
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Accepted/In Press date: 28 July 2016
e-pub ahead of print date: 8 August 2016
Published date: 8 August 2016
Organisations:
EEE
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Local EPrints ID: 402953
URI: http://eprints.soton.ac.uk/id/eprint/402953
ISSN: 0003-6951
PURE UUID: 993ab106-09a6-4b26-9b62-a019ab74d58c
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Date deposited: 21 Nov 2016 09:24
Last modified: 15 Mar 2024 06:04
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Author:
Guochang Li
Author:
George Chen
Author:
Shengtao Li
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