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Strain-engineering in germanium membranes towards light sources on silicon

Strain-engineering in germanium membranes towards light sources on silicon
Strain-engineering in germanium membranes towards light sources on silicon
Bi-axially strained Germanium (Ge) is an ideal material for Silicon (Si) compatible light sources, offering exciting applications in optical interconnect technology. By employing a novel suspended architecture with an optimum design on the curvature, we applied a biaxial tensile strain as large as 0.85% to the central region of the membrane.
Burt, Daniel
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Al-Attili, Abdelrahman
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Li, Zuo
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Liu, Fayong
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Higashitarumizu, Naoki
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Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377
Querin, Ozz
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Gardes, Frederic
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Kelsall, Robert
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Saito, Shin
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Oda, K.
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Burt, Daniel
49c801a2-fb48-40f2-b72f-f713151b96e6
Al-Attili, Abdelrahman
534a1c1f-3f8c-4a78-b71b-50c156e23373
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Higashitarumizu, Naoki
745b7d3e-e723-4fc5-9cf0-b763a8d216d6
Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377
Querin, Ozz
9246b58d-ac1a-418f-8e4d-961e38a98fe8
Gardes, Frederic
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Kelsall, Robert
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Saito, Shin
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Oda, K.
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Burt, Daniel, Al-Attili, Abdelrahman, Li, Zuo, Liu, Fayong, Higashitarumizu, Naoki, Ishikawa, Yasuhiko, Querin, Ozz, Gardes, Frederic, Kelsall, Robert, Saito, Shin and Oda, K. (2017) Strain-engineering in germanium membranes towards light sources on silicon. 2017 IEEE Electron Devices Technology and Manufacturing Conference, Toyama, Japan. 28 Feb - 02 Mar 2017.

Record type: Conference or Workshop Item (Other)

Abstract

Bi-axially strained Germanium (Ge) is an ideal material for Silicon (Si) compatible light sources, offering exciting applications in optical interconnect technology. By employing a novel suspended architecture with an optimum design on the curvature, we applied a biaxial tensile strain as large as 0.85% to the central region of the membrane.

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Submitted date: November 2016
Accepted/In Press date: 28 February 2017
e-pub ahead of print date: 28 February 2017
Published date: 28 February 2017
Venue - Dates: 2017 IEEE Electron Devices Technology and Manufacturing Conference, Toyama, Japan, 2017-02-28 - 2017-03-02
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 403056
URI: https://eprints.soton.ac.uk/id/eprint/403056
PURE UUID: 1575514f-0ffe-469c-ab29-78cb8e72a2f5
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Shin Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 23 Nov 2016 11:26
Last modified: 20 Jul 2019 00:41

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Contributors

Author: Daniel Burt
Author: Abdelrahman Al-Attili
Author: Zuo Li
Author: Fayong Liu ORCID iD
Author: Naoki Higashitarumizu
Author: Yasuhiko Ishikawa
Author: Ozz Querin
Author: Frederic Gardes
Author: Robert Kelsall
Author: Shin Saito ORCID iD
Author: K. Oda

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