Data-set supporting the paper “Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications”. Journal of Physics D: Applied Physics

University of Southampton - ORC - Thalia Domínguez Bucio - tdb2g12@soton.ac.uk

Date of data collection: March 2015- September 2016
Date that the file was created: September 2016
Location of data collection: University of Southampton, U.K.
License:  Creative Commons Attributions
Publications : http://eprints.soton.ac.uk/id/eprint/402364
	
The excel file contains experimental data for the paper:

• Fig. 2
Measured deposition rate (DR [nm/s]) for SiNx layers deposited using NH3-free PECVD with different SiH4 flow [sccm], N2 flow [sccm], RF power [W] and pressure [mTorr].

• Fig. 3
Measured Non-Uniformity % for SiNx layers deposited using NH3-free PECVD with different RF power [W] and pressure [mTorr].

• Fig. 4
Data for displaying the uniformity contour plot of stoichiometric (Si3N4) and silicon rich (Si-rich) SiNx layers deposited using NH3-free PECVD on a wafer scale.

• Fig. 5
Measured N/Si ratio for SiNx layers deposited using NH3-free PECVD with different SiH4 flow [sccm], N2 flow [sccm], RF power [W] and pressure [mTorr].

• Fig. 6
Refractive index as a function of the N/Si ratio of SiNx layers deposited using NH3-free PECVD.

• Fig. 7
Data containing the FTIR spectra of SiNx layers deposited using NH3-free PECVD and standard PECVD recipes.

• Fig. 8
Si-Si and Si-N bond concentrations as a function of the N/Si ratio of SiNx layers deposited using NH3-free PECVD.

• Fig. 9
Si-H and N-H bond concentrations as a function of the N/Si ratio of SiNx layers deposited using NH3-free PECVD.

• Fig. 10
H concentration % as a function of the N/Si ratio of SiNx layers deposited using NH3-free PECVD.

• Fig. 12
Propagation losses[dB/cm] at 1310 and 1550nm as a function of the N/Si ratio of SiNx layers deposited using NH3-free PECVD on wafers with PECVD SiO2 layers.

• Fig. 13
Propagation losses[dB/cm] at 1310 and 1550nm as a function of the N/Si ratio of SiNx layers deposited using NH3-free PECVD on wafers with thermal SiO2 layers.


• Fig. 14
Data comparing the propagation loses [dB/cm] at different wavelengths for SiNx layers deposited using LPCVD, standard PECVD and NH3-free PECVD.