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Experimental study of gradual/abrupt dynamics of HfO2-based 1 memristive devices

Experimental study of gradual/abrupt dynamics of HfO2-based 1 memristive devices
Experimental study of gradual/abrupt dynamics of HfO2-based 1 memristive devices
The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics.
0003-6951
1-5
Brivio, S.
ebb2359b-9093-4c3e-84d1-0885b9b728a0
Covi, E.
2db55c46-182c-401d-ba4f-4020457e8d86
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Fanciulli, M.
b1503882-bc16-411e-86ad-8201a26f1587
Spiga, S.
3e1f1c09-707f-4508-a31f-3d6bfaef7755
Brivio, S.
ebb2359b-9093-4c3e-84d1-0885b9b728a0
Covi, E.
2db55c46-182c-401d-ba4f-4020457e8d86
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Fanciulli, M.
b1503882-bc16-411e-86ad-8201a26f1587
Spiga, S.
3e1f1c09-707f-4508-a31f-3d6bfaef7755

Brivio, S., Covi, E., Serb, A., Prodromakis, T., Fanciulli, M. and Spiga, S. (2016) Experimental study of gradual/abrupt dynamics of HfO2-based 1 memristive devices. Applied Physics Letters, 109 (13), 1-5. (doi:10.1063/1.4963675).

Record type: Article

Abstract

The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics.

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Accepted/In Press date: 14 September 2016
Published date: 26 September 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 403928
URI: https://eprints.soton.ac.uk/id/eprint/403928
ISSN: 0003-6951
PURE UUID: 6557475e-3310-44b6-8281-b53e3616ba99
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 16 Dec 2016 11:51
Last modified: 10 Dec 2019 01:35

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