Dataset for Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning
Shi, Xiaoqing, Prewett, Philip, Huq, Ejaz, Bagnall, Darren, Robinson, Alex and Boden, Stuart (2017) Dataset for Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning University of Southampton doi:10.5258/SOTON/404189 [Dataset]
Microsoft Excel Shi_ME-2016_data_v2
Available under License Creative Commons Attribution.
Dataset supporting: Shi, Xiaoqing et al (2016) Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning. Microelectronic Engineering. Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~40 ?C/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation are also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.
|Digital Object Identifier (DOI):||doi:10.5258/SOTON/404189|
|Keywords:||Helium ion beam lithography, Helium ion Microscope, Fullerene, Molecular resist, Nanolithography, Next-generation lithography|
|Date Deposited:||17 Jan 2017 16:47|
|Last Modified:||21 Apr 2017 16:27|
Single Nanometer Manufacturing for beyond CMOS devices (SNM)
Funded by: UNSPECIFIED (318804)
1 January 2013 to 31 December 2016
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)