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Dataset for Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning

Dataset for Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning
Dataset for Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning
Dataset supporting: Shi, Xiaoqing et al (2016) Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning. Microelectronic Engineering.Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~40 ?C/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation are also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.Funded by Single Nanometer Manufacturing for beyond CMOS devices (SNM, 318804), 2013 to 2016.
helium ion bean lithography, helium ion microscope, Fullerene, molecular resist, nanolithography, next-generation lithography
University of Southampton
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Prewett, Philip
6a3a966f-5dd0-43d0-8a51-6a5f78e56b1a
Huq, Ejaz
6ba52b03-395d-4361-96b0-5f0d9d7eb746
Bagnall, Darren
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Robinson, Alex
f00df480-fa9e-45ad-b05f-a1f9b0c2a4f9
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Prewett, Philip
6a3a966f-5dd0-43d0-8a51-6a5f78e56b1a
Huq, Ejaz
6ba52b03-395d-4361-96b0-5f0d9d7eb746
Bagnall, Darren
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Robinson, Alex
f00df480-fa9e-45ad-b05f-a1f9b0c2a4f9
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8

Shi, Xiaoqing, Prewett, Philip, Huq, Ejaz, Bagnall, Darren, Robinson, Alex and Boden, Stuart (2017) Dataset for Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning University of Southampton doi:10.5258/SOTON/404189 [Dataset]

Record type: Dataset

Abstract

Dataset supporting: Shi, Xiaoqing et al (2016) Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning. Microelectronic Engineering.Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~40 ?C/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation are also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.Funded by Single Nanometer Manufacturing for beyond CMOS devices (SNM, 318804), 2013 to 2016.

Spreadsheet Shi_ME_2016_data_v2.xlsx - Dataset
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More information

Published date: 2017
Keywords: helium ion bean lithography, helium ion microscope, Fullerene, molecular resist, nanolithography, next-generation lithography
Organisations: Electronics & Computer Science, Nanoelectronics and Nanotechnology
Projects:
Single Nanometer Manufacturing for beyond CMOS devices (SNM)
Funded by: UNSPECIFIED (318804)
1 January 2013 to 31 December 2016

Identifiers

Local EPrints ID: 404189
URI: http://eprints.soton.ac.uk/id/eprint/404189
PURE UUID: aa3d33bc-5db2-4065-85ce-a449952c1d4c
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828

Catalogue record

Date deposited: 17 Jan 2017 16:47
Last modified: 04 Oct 2017 16:32

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Contributors

Creator: Xiaoqing Shi
Creator: Philip Prewett
Creator: Ejaz Huq
Creator: Darren Bagnall
Creator: Alex Robinson
Creator: Stuart Boden ORCID iD

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