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Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides

Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
Transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become promising complimentary materials to graphene sharing many of its attributes. They may however offer properties that are unattainable in graphene, in particular TMDCs offer a bandgap tunable through both composition and number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. The current challenge in this emerging research field is to provide a reliable process to fabricate large area of atomically thin 2D TMDCs on the desired substrate. Chemical vapor deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. In addition, Van der Waals epitaxy could provide the vapor phase epitaxy of these TMDCs on the substrates with mismatched lattice constants. In this talk we describe our recent development in TMDCs materials using CVD technology and Van der Waals epitaxy and discuss their properties and potential applications.
Huang, Chung-Che
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Aspiotis, Nikolaos
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Cui, Qingsong
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Alzaidy, Ghadah
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Weatherby, Ed
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Craig, Chris
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Morgan, Katrina
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Zeimpekis, Ioannis
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Hewak, Daniel
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Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Aspiotis, Nikolaos
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Cui, Qingsong
246f6604-fcb0-4052-b00b-677b08739083
Alzaidy, Ghadah
2d39b828-3eb4-4d96-85e6-d436a2b71435
Weatherby, Ed
90e34e23-3a6e-432f-8003-6510efbe1d02
Craig, Chris
2328b42b-552e-4a82-941d-45449e952f10
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, Chung-Che, Aspiotis, Nikolaos, Cui, Qingsong, Alzaidy, Ghadah, Weatherby, Ed, Craig, Chris, Morgan, Katrina, Zeimpekis, Ioannis and Hewak, Daniel (2017) Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides. 2nd International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Viet Nam. 24 - 29 Apr 2017.

Record type: Conference or Workshop Item (Other)

Abstract

Transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become promising complimentary materials to graphene sharing many of its attributes. They may however offer properties that are unattainable in graphene, in particular TMDCs offer a bandgap tunable through both composition and number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. The current challenge in this emerging research field is to provide a reliable process to fabricate large area of atomically thin 2D TMDCs on the desired substrate. Chemical vapor deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. In addition, Van der Waals epitaxy could provide the vapor phase epitaxy of these TMDCs on the substrates with mismatched lattice constants. In this talk we describe our recent development in TMDCs materials using CVD technology and Van der Waals epitaxy and discuss their properties and potential applications.

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e-pub ahead of print date: 25 April 2017
Venue - Dates: 2nd International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Viet Nam, 2017-04-24 - 2017-04-29
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 404279
URI: http://eprints.soton.ac.uk/id/eprint/404279
PURE UUID: 2be799f1-b83a-4421-8911-735082ef1d90
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Chris Craig: ORCID iD orcid.org/0000-0001-6919-4294
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 05 Jan 2017 16:25
Last modified: 18 Feb 2021 17:18

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