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SRAM-PUF Based on Selective Power-Up and Non-Destructive Scheme

Mispan, Mohd, Zwolinski, Mark and Halak, Basel (2016) SRAM-PUF Based on Selective Power-Up and Non-Destructive Scheme At 17th International Workshop on Microprocessor/SoC Test and Verification (MTV 2016), United States.

Record type: Conference or Workshop Item (Paper)


Abstract. Research in hardware security, particularly on Physical Unclonable Functions (PUF) has attracted a lot of attention in recent years. PUFs provide primitives for implementing encryption/decryption and device fingerprinting. Though a wide range of solutions exists for PUF-based CMOS devices, the most investigated solutions today for weak PUF implementation are based on the use of random start-up values of SRAM, which offers the advantage of reusing memories that already exist in many designs. However, the start-up value availability is compromised during memory write access which causes a limitation in using SRAM as both memory and PUF. Although using a dedicated SRAM as PUF could overcome the problem, it comes with high extra overhead. In this work, we propose a new scheme called ‘selective power-up and non-destructive’ scheme to enable SRAM as memory and PUF. A case study of generating a 128-bit key shows that the area overhead of proposed scheme is approximately 12.5_ smaller than for a dedicated SRAM-PUF

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Accepted/In Press date: 31 December 2016
Venue - Dates: 17th International Workshop on Microprocessor/SoC Test and Verification (MTV 2016), United States, 2016-12-31
Organisations: Electronics & Computer Science


Local EPrints ID: 405597
PURE UUID: ade5f176-0321-4db7-a9b3-2da2d70f3ff7
ORCID for Mark Zwolinski: ORCID iD

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Date deposited: 08 Feb 2017 11:29
Last modified: 17 Jul 2017 17:21

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Author: Mohd Mispan
Author: Mark Zwolinski ORCID iD
Author: Basel Halak

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