Electron hopping transport in 2D zinc oxide nanoflakes
Electron hopping transport in 2D zinc oxide nanoflakes
A sequential hydrothermal process was used to synthesize ZnO nanostructures on Si substrates. The synthesized ZnO nanostructures were inspected and presented a morphology of 2D structures, named nanoflakes. These ZnO nanoflakes had a thickness of tens of nanometers. An energy dispersive x-ray spectrum revealed their composition of only Zn and O elements. In addition, its crystalline structure was investigated by high-resolution transmission electron microscopy. The nanoflakes were then dispersed for another morphology measurement using atomic force microscopy and their average thickness was determined. The dispersed nanoflakes were further contacted with metal electrodes for electron transport measurements. Through the analysis of temperature-dependent resistivity, it was confirmed that the electron transport in such ZnO nanoflakes agrees well with the theory of Mott's 2D variable range hopping. The nature of the 2D electron system in the ZnO nanoflakes points to potential applications of this 2D semiconductor as a new channel material for electronics.
Jian, Dunliang
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Lai, Jian-Jhong
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Lin, Yen-fu
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Zhai, Jianpang
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Li, Irene Ling
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Tian, Feng
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Wang, Shulin
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Hua, Ping
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Ku, Ming-Ming
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Jian, Wen-Bin
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Ruan, Shuangchen
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Tang, Zikang
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Jian, Dunliang
c95c2c67-5528-4468-98ad-979578b9af69
Lai, Jian-Jhong
f1a3acc4-b190-4fbb-81f0-535cef78816b
Lin, Yen-fu
74f3b470-de0c-4260-8663-19364da23f78
Zhai, Jianpang
752e1b0f-3625-4aae-8b2d-8252f7df8f11
Li, Irene Ling
11ef46a9-91a6-4d90-b251-e3aeb386abe8
Tian, Feng
f7b27bd2-3fc8-401c-b90b-f701d6dde410
Wang, Shulin
5a0330d0-e6ff-461f-910e-0e18c03a5ca5
Hua, Ping
92fa76e2-970b-45f5-a459-d9f95e735303
Ku, Ming-Ming
e6917e57-65a8-4cc8-b485-1ad060b11fb4
Jian, Wen-Bin
050b911d-f64f-4922-b2db-2c2848757435
Ruan, Shuangchen
5880cbc3-f028-4f39-9836-00fc3c089997
Tang, Zikang
0c0fbd52-c9b3-4070-8a6a-e5baf20e860a
Jian, Dunliang, Lai, Jian-Jhong, Lin, Yen-fu, Zhai, Jianpang, Li, Irene Ling, Tian, Feng, Wang, Shulin, Hua, Ping, Ku, Ming-Ming, Jian, Wen-Bin, Ruan, Shuangchen and Tang, Zikang
(2017)
Electron hopping transport in 2D zinc oxide nanoflakes.
2D Materials, 4 (2), [025028].
(doi:10.1088/2053-1583/aa5a8d).
(PMID:2D Mater. 4 (2017) 025028)
Abstract
A sequential hydrothermal process was used to synthesize ZnO nanostructures on Si substrates. The synthesized ZnO nanostructures were inspected and presented a morphology of 2D structures, named nanoflakes. These ZnO nanoflakes had a thickness of tens of nanometers. An energy dispersive x-ray spectrum revealed their composition of only Zn and O elements. In addition, its crystalline structure was investigated by high-resolution transmission electron microscopy. The nanoflakes were then dispersed for another morphology measurement using atomic force microscopy and their average thickness was determined. The dispersed nanoflakes were further contacted with metal electrodes for electron transport measurements. Through the analysis of temperature-dependent resistivity, it was confirmed that the electron transport in such ZnO nanoflakes agrees well with the theory of Mott's 2D variable range hopping. The nature of the 2D electron system in the ZnO nanoflakes points to potential applications of this 2D semiconductor as a new channel material for electronics.
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Submitted date: 18 December 2016
Accepted/In Press date: 12 January 2017
e-pub ahead of print date: 8 February 2017
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 405757
URI: http://eprints.soton.ac.uk/id/eprint/405757
PURE UUID: c4cbf560-26a8-4fcc-80eb-f1fdc0bb4272
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Date deposited: 18 Feb 2017 00:21
Last modified: 16 Mar 2024 05:02
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Contributors
Author:
Dunliang Jian
Author:
Jian-Jhong Lai
Author:
Yen-fu Lin
Author:
Jianpang Zhai
Author:
Irene Ling Li
Author:
Feng Tian
Author:
Shulin Wang
Author:
Ping Hua
Author:
Ming-Ming Ku
Author:
Wen-Bin Jian
Author:
Shuangchen Ruan
Author:
Zikang Tang
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