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Characterisation of low temperature and semi-insulating GaAs lateral photo-Dember THz emitters

Characterisation of low temperature and semi-insulating GaAs lateral photo-Dember THz emitters
Characterisation of low temperature and semi-insulating GaAs lateral photo-Dember THz emitters
We characterise a set of Lateral Photo Dember (LPD) terahertz emitters fabricated on annealed low temperature grown (LTG) GaAs, unannealed LTG-GaAs and SI-GaAs substrates. Our results show that unannealed LTG-GaAs is the most efficient LPD emitter of this set due to a higher saturation fluence.
IEEE
McBryde, Duncan
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Barnes, Mark E.
0026b438-44fe-40af-9284-552e04675efa
Gow, Paul C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Berry, Sam A.
0f768f48-36c4-4599-8917-7aae657378a7
Daniell, Geoff J.
19ecb436-1185-4f0d-a17c-86113ecfe4e2
Beere, Harvey E.
21adf7b3-de6c-4b51-96ce-76c673e4dc31
Ritchie, David A.
dafb13bd-0736-4dd3-972f-0c73570a4278
Apostolopoulos, Vasilis
8a898740-4c71-4040-a577-9b9d70530b4d
McBryde, Duncan
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Barnes, Mark E.
0026b438-44fe-40af-9284-552e04675efa
Gow, Paul C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Berry, Sam A.
0f768f48-36c4-4599-8917-7aae657378a7
Daniell, Geoff J.
19ecb436-1185-4f0d-a17c-86113ecfe4e2
Beere, Harvey E.
21adf7b3-de6c-4b51-96ce-76c673e4dc31
Ritchie, David A.
dafb13bd-0736-4dd3-972f-0c73570a4278
Apostolopoulos, Vasilis
8a898740-4c71-4040-a577-9b9d70530b4d

McBryde, Duncan, Barnes, Mark E., Gow, Paul C., Berry, Sam A., Daniell, Geoff J., Beere, Harvey E., Ritchie, David A. and Apostolopoulos, Vasilis (2013) Characterisation of low temperature and semi-insulating GaAs lateral photo-Dember THz emitters. In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE. 2 pp . (doi:10.1109/IRMMW-THz.2013.6665658).

Record type: Conference or Workshop Item (Paper)

Abstract

We characterise a set of Lateral Photo Dember (LPD) terahertz emitters fabricated on annealed low temperature grown (LTG) GaAs, unannealed LTG-GaAs and SI-GaAs substrates. Our results show that unannealed LTG-GaAs is the most efficient LPD emitter of this set due to a higher saturation fluence.

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More information

Published date: September 2013
Organisations: Optoelectronics Research Centre, Physics & Astronomy, Quantum, Light & Matter Group
Learn more about Optoelectronics Research Centre research Learn more about Physics & Astronomy research

Identifiers

Local EPrints ID: 406344
URI: http://eprints.soton.ac.uk/id/eprint/406344
DOI: doi:10.1109/IRMMW-THz.2013.6665658
PURE UUID: 157dff93-7bf6-4565-ade8-c0732e51fffa
ORCID for Paul C. Gow: ORCID iD orcid.org/0000-0002-3247-9082
ORCID for Sam A. Berry: ORCID iD orcid.org/0000-0002-9538-8655
ORCID for Vasilis Apostolopoulos: ORCID iD orcid.org/0000-0003-3733-2191

Catalogue record

Date deposited: 10 Mar 2017 10:45
Last modified: 26 Nov 2021 02:58

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Contributors

Author: Duncan McBryde
Author: Mark E. Barnes
Author: Paul C. Gow ORCID iD
Author: Sam A. Berry ORCID iD
Author: Geoff J. Daniell
Author: Harvey E. Beere
Author: David A. Ritchie
Author: Vasilis Apostolopoulos ORCID iD

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