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Simulation of terahertz generation from lateral diffusion currents in semiconductor devices

Simulation of terahertz generation from lateral diffusion currents in semiconductor devices
Simulation of terahertz generation from lateral diffusion currents in semiconductor devices
Terahertz sources, Carrier dynamics, Photo-Dember, Semiconductor device modeling
1866-6892
1030-1044
Barnes, Mark E.
0026b438-44fe-40af-9284-552e04675efa
Daniell, Geoff J.
19ecb436-1185-4f0d-a17c-86113ecfe4e2
Gow, Paul
193394b1-fe2d-41de-a9aa-6de7e5925b18
Apostolopoulos, Vasilis
8a898740-4c71-4040-a577-9b9d70530b4d
Barnes, Mark E.
0026b438-44fe-40af-9284-552e04675efa
Daniell, Geoff J.
19ecb436-1185-4f0d-a17c-86113ecfe4e2
Gow, Paul
193394b1-fe2d-41de-a9aa-6de7e5925b18
Apostolopoulos, Vasilis
8a898740-4c71-4040-a577-9b9d70530b4d

Barnes, Mark E., Daniell, Geoff J., Gow, Paul and Apostolopoulos, Vasilis (2014) Simulation of terahertz generation from lateral diffusion currents in semiconductor devices. JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 35 (12), 1030-1044. (doi:10.1007/s10762-014-0111-y).

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More information

Published date: December 2014
Keywords: Terahertz sources, Carrier dynamics, Photo-Dember, Semiconductor device modeling
Organisations: Optoelectronics Research Centre, Physics & Astronomy, Quantum, Light & Matter Group
Learn more about Optoelectronics Research Centre research Learn more about Physics & Astronomy research

Identifiers

Local EPrints ID: 406346
URI: http://eprints.soton.ac.uk/id/eprint/406346
DOI: doi:10.1007/s10762-014-0111-y
ISSN: 1866-6892
PURE UUID: 8064f812-f6f7-4b1d-aa6c-68f880037e40
ORCID for Paul Gow: ORCID iD orcid.org/0000-0002-3247-9082
ORCID for Vasilis Apostolopoulos: ORCID iD orcid.org/0000-0003-3733-2191

Catalogue record

Date deposited: 10 Mar 2017 10:45
Last modified: 16 Mar 2024 04:10

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Contributors

Author: Mark E. Barnes
Author: Geoff J. Daniell
Author: Paul Gow ORCID iD
Author: Vasilis Apostolopoulos ORCID iD

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