Lensless proximity EUV lithography with a xenon gas discharge plasma radiation

Kim, Hyunsu, Danylyuk, Serhiy, Brose, Sascha, Loosen, Peter, Bergmann, Klaus, Brocklesby, William and Juschkin, Larissa (2015) Lensless proximity EUV lithography with a xenon gas discharge plasma radiation. 14th International Conference on X-Ray Lasers, Colorado State University, Fort Collins, United States. 25 - 29 May 2014. pp. 313-319 .

Abstract

The possibilities and limitations of proximity and interference lithography under extreme ultraviolet (EUV) radiation are explored. Utilizing partially coherent EUV radiation at central wavelength of 10.9 nm from a Xe gas discharge plasma source, it is shown that proximity printing in the Fresnel diffraction regime can produce the high-resolution features even with low-resolution masks, and also yield sub-30 nm edge resolution in the resist. The scalability limit within non-paraxial case has been also studied. The effect of the diffraction behind the transmission mask is evaluated with respect to the achievable resolution. The finite-difference time-domain simulation of the diffraction patterns behind the Ni/Nb-based transmission mask is performed varying the pitch size. The results demonstrate that the method can be used to produce patterns with resolution down to 7.5 nm half-pitch with 2:1 mask demagnification utilizing achromatic Talbot effect with transverse electric (TE)-polarized light.

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Contributors

Author: William Brocklesby

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