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Lensless proximity EUV lithography with a xenon gas discharge plasma radiation

Lensless proximity EUV lithography with a xenon gas discharge plasma radiation
Lensless proximity EUV lithography with a xenon gas discharge plasma radiation
The possibilities and limitations of proximity and interference lithography under extreme ultraviolet (EUV) radiation are explored. Utilizing partially coherent EUV radiation at central wavelength of 10.9 nm from a Xe gas discharge plasma source, it is shown that proximity printing in the Fresnel diffraction regime can produce the high-resolution features even with low-resolution masks, and also yield sub-30 nm edge resolution in the resist. The scalability limit within non-paraxial case has been also studied. The effect of the diffraction behind the transmission mask is evaluated with respect to the achievable resolution. The finite-difference time-domain simulation of the diffraction patterns behind the Ni/Nb-based transmission mask is performed varying the pitch size. The results demonstrate that the method can be used to produce patterns with resolution down to 7.5 nm half-pitch with 2:1 mask demagnification utilizing achromatic Talbot effect with transverse electric (TE)-polarized light.
313-319
Kim, Hyunsu
39359bf5-7ed4-4524-ba57-f8ce78468b5a
Danylyuk, Serhiy
aae539cf-4943-47a1-8bd9-4902d54a5bf2
Brose, Sascha
435a42ee-1681-45ac-8f76-b17c82f01f27
Loosen, Peter
3b90df19-ffbb-4780-a9a2-674bb28c4acc
Bergmann, Klaus
ec870579-7eb1-47bd-b919-07e26fc264b0
Brocklesby, William
c53ca2f6-db65-4e19-ad00-eebeb2e6de67
Juschkin, Larissa
5c7e1507-20c3-45a7-826a-82f1e31fd146
Kim, Hyunsu
39359bf5-7ed4-4524-ba57-f8ce78468b5a
Danylyuk, Serhiy
aae539cf-4943-47a1-8bd9-4902d54a5bf2
Brose, Sascha
435a42ee-1681-45ac-8f76-b17c82f01f27
Loosen, Peter
3b90df19-ffbb-4780-a9a2-674bb28c4acc
Bergmann, Klaus
ec870579-7eb1-47bd-b919-07e26fc264b0
Brocklesby, William
c53ca2f6-db65-4e19-ad00-eebeb2e6de67
Juschkin, Larissa
5c7e1507-20c3-45a7-826a-82f1e31fd146

Kim, Hyunsu, Danylyuk, Serhiy, Brose, Sascha, Loosen, Peter, Bergmann, Klaus, Brocklesby, William and Juschkin, Larissa (2015) Lensless proximity EUV lithography with a xenon gas discharge plasma radiation. 14th International Conference on X-Ray Lasers, Fort Collins, United States. 26 - 30 May 2014. pp. 313-319 .

Record type: Conference or Workshop Item (Paper)

Abstract

The possibilities and limitations of proximity and interference lithography under extreme ultraviolet (EUV) radiation are explored. Utilizing partially coherent EUV radiation at central wavelength of 10.9 nm from a Xe gas discharge plasma source, it is shown that proximity printing in the Fresnel diffraction regime can produce the high-resolution features even with low-resolution masks, and also yield sub-30 nm edge resolution in the resist. The scalability limit within non-paraxial case has been also studied. The effect of the diffraction behind the transmission mask is evaluated with respect to the achievable resolution. The finite-difference time-domain simulation of the diffraction patterns behind the Ni/Nb-based transmission mask is performed varying the pitch size. The results demonstrate that the method can be used to produce patterns with resolution down to 7.5 nm half-pitch with 2:1 mask demagnification utilizing achromatic Talbot effect with transverse electric (TE)-polarized light.

Full text not available from this repository.

More information

Accepted/In Press date: May 2014
e-pub ahead of print date: 20 September 2015
Venue - Dates: 14th International Conference on X-Ray Lasers, Fort Collins, United States, 2014-05-26 - 2014-05-30
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 406662
URI: https://eprints.soton.ac.uk/id/eprint/406662
PURE UUID: 80063ab0-a6f3-4698-abc4-aa2741a63cd9
ORCID for William Brocklesby: ORCID iD orcid.org/0000-0002-2123-6712

Catalogue record

Date deposited: 18 Mar 2017 02:27
Last modified: 20 Jul 2019 01:25

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Contributors

Author: Hyunsu Kim
Author: Serhiy Danylyuk
Author: Sascha Brose
Author: Peter Loosen
Author: Klaus Bergmann
Author: Larissa Juschkin

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