Electrochemical formation of p-type Bi0.5Sb1.5Te3 thick films onto nickel
Electrochemical formation of p-type Bi0.5Sb1.5Te3 thick films onto nickel
Bismuth-telluride-based alloys are currently the best commercially available thermoelectric materials for applications at room temperatures. Up to 150 micron thick layers of bismuth antimony telluride (Bi0.5Sb1.5Te3) were directly deposited onto nickel by either potenstiostatic or potentiodynamic electrodeposition. Cyclic voltammetry was employed to identify the optimal deposition potential. The films were characterized by scanning electron microscopy, energy dispersive X-rays and X-ray diffraction. The p-type films were found to be well adherent, uniform and stoichiometric with a high power factor of 2.3 × 10−4 W m−1 K−2 at film growth rates of up to 40 μm h−1.
bismuth antimony telluride, Electrodeposition, Nickel, P-type , Thermoelectrics, thick films
192-195
Lei, C.
65d097cc-5757-4114-8a90-5bcbe24fd69f
Burton, M.
4a0d87d4-48b8-46bb-8b4d-3b3cf754563b
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Lei, C.
65d097cc-5757-4114-8a90-5bcbe24fd69f
Burton, M.
4a0d87d4-48b8-46bb-8b4d-3b3cf754563b
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Lei, C., Burton, M. and Nandhakumar, Iris S.
(2017)
Electrochemical formation of p-type Bi0.5Sb1.5Te3 thick films onto nickel.
Journal of the Electrochemical Society, 164 (4), .
(doi:10.1149/2.1151704jes).
Abstract
Bismuth-telluride-based alloys are currently the best commercially available thermoelectric materials for applications at room temperatures. Up to 150 micron thick layers of bismuth antimony telluride (Bi0.5Sb1.5Te3) were directly deposited onto nickel by either potenstiostatic or potentiodynamic electrodeposition. Cyclic voltammetry was employed to identify the optimal deposition potential. The films were characterized by scanning electron microscopy, energy dispersive X-rays and X-ray diffraction. The p-type films were found to be well adherent, uniform and stoichiometric with a high power factor of 2.3 × 10−4 W m−1 K−2 at film growth rates of up to 40 μm h−1.
Text
BiSbTe_thickfilms
- Accepted Manuscript
Text
J. Electrochem. Soc.-2017-Lei-D192-5
- Version of Record
More information
Accepted/In Press date: 6 February 2017
e-pub ahead of print date: 14 February 2017
Keywords:
bismuth antimony telluride, Electrodeposition, Nickel, P-type , Thermoelectrics, thick films
Organisations:
Chemistry, Electrochemistry
Identifiers
Local EPrints ID: 407389
URI: http://eprints.soton.ac.uk/id/eprint/407389
ISSN: 0013-4651
PURE UUID: e902aaee-125d-4c61-ab11-3e13f50ad754
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Date deposited: 05 Apr 2017 01:06
Last modified: 16 Mar 2024 02:58
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Author:
C. Lei
Author:
M. Burton
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