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Grayscale photolithography with phase change material photomasks

Grayscale photolithography with phase change material photomasks
Grayscale photolithography with phase change material photomasks
Here we report a grayscale photolithography technique using phase change materials, by inducing a multi-level refractive-index-changing phase-transition with femtosecond pulses. The grayscale phase change materials are used as the photomasks to locally change the exposure dose to enable shaping photoresist contour and developing 3D silicon structures. Unlike traditional photomasks, the transmission efficiency of phase change material masks can be tailored to arbitrary grayscale levels with submicron lateral resolution, and the spatial pattern can be optically reconfigured on demand.
Wang, Qian
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Yuan, Guanghui
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Kiang, Kian
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Sun, Kai
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Gholipour, Behrad
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Rogers, Edward
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Huang, Kevin Chung-Che
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Ang, S.S.
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Zheludev, Nikolai
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Teng, Jinghua
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Wang, Qian
a9a64412-49cc-4ab7-9bb6-646551219d66
Yuan, Guanghui
d7af6f06-7da9-41ef-b7f9-cfe09e55fcaa
Kiang, Kian
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Rogers, Edward
b92cc8ab-0d91-4b2e-b5c7-8a2f490a36a2
Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Ang, S.S.
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Zheludev, Nikolai
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Teng, Jinghua
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Wang, Qian, Yuan, Guanghui, Kiang, Kian, Sun, Kai, Gholipour, Behrad, Rogers, Edward, Huang, Kevin Chung-Che, Ang, S.S., Zheludev, Nikolai and Teng, Jinghua (2017) Grayscale photolithography with phase change material photomasks. Conference on Lasers and Electro-Optics (CLEO Pacific Rim), , Singapore. 31 Jul - 04 Aug 2017.

Record type: Conference or Workshop Item (Paper)

Abstract

Here we report a grayscale photolithography technique using phase change materials, by inducing a multi-level refractive-index-changing phase-transition with femtosecond pulses. The grayscale phase change materials are used as the photomasks to locally change the exposure dose to enable shaping photoresist contour and developing 3D silicon structures. Unlike traditional photomasks, the transmission efficiency of phase change material masks can be tailored to arbitrary grayscale levels with submicron lateral resolution, and the spatial pattern can be optically reconfigured on demand.

Text
CLEO_PR_Reconfigurable photolithography mask - Accepted Manuscript
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More information

Accepted/In Press date: 24 April 2017
Published date: 31 July 2017
Venue - Dates: Conference on Lasers and Electro-Optics (CLEO Pacific Rim), , Singapore, 2017-07-31 - 2017-08-04
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 408079
URI: http://eprints.soton.ac.uk/id/eprint/408079
PURE UUID: 1f6547fb-1267-440b-8c3a-5e92080a6131
ORCID for Kian Kiang: ORCID iD orcid.org/0000-0002-7326-909X
ORCID for Kevin Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Nikolai Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

Catalogue record

Date deposited: 11 May 2017 01:05
Last modified: 22 Nov 2021 05:20

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Contributors

Author: Qian Wang
Author: Guanghui Yuan
Author: Kian Kiang ORCID iD
Author: Kai Sun
Author: Behrad Gholipour
Author: Edward Rogers
Author: S.S. Ang
Author: Jinghua Teng

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