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Simulation of total ionizing dose and random dopant fluctuations in sub-100 nm transistor nodes

Simulation of total ionizing dose and random dopant fluctuations in sub-100 nm transistor nodes
Simulation of total ionizing dose and random dopant fluctuations in sub-100 nm transistor nodes
Finite Elements Method simulations of Total Ionizing Dose in two state-of-the-art transistor nodes are presented: The 45 nm Partially-Depleted Silicon-on-Insulator MOSFET and the 22 nm bulk FinFET. A systematic method has been developed to study charge trapping in field isolation oxides using the simulation software Sentaurus device. The method is based on solving transport equations for carriers in the oxide. Aspects of simulation of interface trap formation through de-passivation from ionic hydrogen are discussed. This includes transport of hydrogen species in the device and state transitions. Calibration of the trapping model is performed using experimental results on Buried OXide irradiated capacitors of 400 nm SiO2. The extracted parameters are then used in the two FET technologies examined. In both cases, increased radiation hardness of the devices, tested using the bulk traps method, up to total doses of 600 KRad(SiO2) in the case of the PDSOI and 1 MRad(SiO2) in the case of the FinFET is shown. In the 45nm node, Random Dopant Fluctuations (RDFs) using the Sano and the Impedance Field Method are examined in combination with charge introduced in the field oxide regions. RDFs are shown to have a significant effect in the sub-threshold characteristics of the irradiated devices during the weak inversion of the parasitic transistor induced in the device. Their effect is negligible, however, when the parasitic channel is fully formed.
University of Southampton
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c

Chatzikyriakou, Eleni (2017) Simulation of total ionizing dose and random dopant fluctuations in sub-100 nm transistor nodes. University of Southampton, Doctoral Thesis, 119pp.

Record type: Thesis (Doctoral)

Abstract

Finite Elements Method simulations of Total Ionizing Dose in two state-of-the-art transistor nodes are presented: The 45 nm Partially-Depleted Silicon-on-Insulator MOSFET and the 22 nm bulk FinFET. A systematic method has been developed to study charge trapping in field isolation oxides using the simulation software Sentaurus device. The method is based on solving transport equations for carriers in the oxide. Aspects of simulation of interface trap formation through de-passivation from ionic hydrogen are discussed. This includes transport of hydrogen species in the device and state transitions. Calibration of the trapping model is performed using experimental results on Buried OXide irradiated capacitors of 400 nm SiO2. The extracted parameters are then used in the two FET technologies examined. In both cases, increased radiation hardness of the devices, tested using the bulk traps method, up to total doses of 600 KRad(SiO2) in the case of the PDSOI and 1 MRad(SiO2) in the case of the FinFET is shown. In the 45nm node, Random Dopant Fluctuations (RDFs) using the Sano and the Impedance Field Method are examined in combination with charge introduced in the field oxide regions. RDFs are shown to have a significant effect in the sub-threshold characteristics of the irradiated devices during the weak inversion of the parasitic transistor induced in the device. Their effect is negligible, however, when the parasitic channel is fully formed.

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More information

Published date: March 2017
Organisations: University of Southampton, Electronics & Computer Science

Identifiers

Local EPrints ID: 410356
URI: http://eprints.soton.ac.uk/id/eprint/410356
PURE UUID: 8edb58b0-cd90-4b17-a95c-fd0948fc48d0
ORCID for Eleni Chatzikyriakou: ORCID iD orcid.org/0000-0002-5624-3701
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 07 Jun 2017 16:30
Last modified: 17 Dec 2019 01:51

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