Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs
Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs
The contribution of random dopant fluctuations in the post-irradiation response of deep sub-micron Silicon-Insulator MOSFETs is examined with the use of TCAD simulation tools. The variation in the off-state leakage current is quantified for different Total Ionizing Dose charge concentrations in the buried oxide and shallow trench isolation. The results show that depending on the charge in the oxide and the doping densities employed, doping fluctuations can play a significant role in the post-irradiation characteristics of the device.
659-662
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
21 January 2016
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni, Morgan, Katrina, Ashburn, Peter, Redman-White, William and De Groot, Cornelis
(2016)
Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs.
In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).
IEEE.
.
(doi:10.1109/NANO.2015.7388691).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The contribution of random dopant fluctuations in the post-irradiation response of deep sub-micron Silicon-Insulator MOSFETs is examined with the use of TCAD simulation tools. The variation in the off-state leakage current is quantified for different Total Ionizing Dose charge concentrations in the buried oxide and shallow trench isolation. The results show that depending on the charge in the oxide and the doping densities employed, doping fluctuations can play a significant role in the post-irradiation characteristics of the device.
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Published date: 21 January 2016
Venue - Dates:
2015 IEEE 15th International Conference on Nanotechnology, , Rome, Italy, 2015-07-27 - 2015-07-30
Organisations:
Nanoelectronics and Nanotechnology, Electronics & Computer Science
Identifiers
Local EPrints ID: 410504
URI: http://eprints.soton.ac.uk/id/eprint/410504
PURE UUID: 50d52bb7-fc0d-4a29-838f-ae0d3098754a
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Date deposited: 09 Jun 2017 09:01
Last modified: 16 Mar 2024 04:05
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Contributors
Author:
Eleni Chatzikyriakou
Author:
Katrina Morgan
Author:
William Redman-White
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