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Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs

Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs
Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs
The contribution of random dopant fluctuations in the post-irradiation response of deep sub-micron Silicon-Insulator MOSFETs is examined with the use of TCAD simulation tools. The variation in the off-state leakage current is quantified for different Total Ionizing Dose charge concentrations in the buried oxide and shallow trench isolation. The results show that depending on the charge in the oxide and the doping densities employed, doping fluctuations can play a significant role in the post-irradiation characteristics of the device.
659-662
IEEE
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c

Chatzikyriakou, Eleni, Morgan, Katrina, Ashburn, Peter, Redman-White, William and De Groot, Cornelis (2016) Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs. In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE. pp. 659-662 . (doi:10.1109/NANO.2015.7388691).

Record type: Conference or Workshop Item (Paper)

Abstract

The contribution of random dopant fluctuations in the post-irradiation response of deep sub-micron Silicon-Insulator MOSFETs is examined with the use of TCAD simulation tools. The variation in the off-state leakage current is quantified for different Total Ionizing Dose charge concentrations in the buried oxide and shallow trench isolation. The results show that depending on the charge in the oxide and the doping densities employed, doping fluctuations can play a significant role in the post-irradiation characteristics of the device.

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More information

Published date: 21 January 2016
Venue - Dates: 2015 IEEE 15th International Conference on Nanotechnology, Rome, Italy, 2015-07-27 - 2015-07-30
Organisations: Nanoelectronics and Nanotechnology, Electronics & Computer Science

Identifiers

Local EPrints ID: 410504
URI: https://eprints.soton.ac.uk/id/eprint/410504
PURE UUID: 50d52bb7-fc0d-4a29-838f-ae0d3098754a
ORCID for Eleni Chatzikyriakou: ORCID iD orcid.org/0000-0002-5624-3701
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 09 Jun 2017 09:01
Last modified: 14 Mar 2019 01:46

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Contributors

Author: Eleni Chatzikyriakou ORCID iD
Author: Katrina Morgan ORCID iD
Author: Peter Ashburn
Author: William Redman-White

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