Helium ion beam lithography for sub-10nm pattern definition
Helium ion beam lithography for sub-10nm pattern definition
An emerging lithographic technique offers a promising alternative to electron beam lithography for fabricating new semiconductor devices with both traditional and non-traditional resists.
helium ion beam lithography, Helium ion microscope, nanolithography
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Boden, Stuart and Shi, Xiaoqing
(2017)
Helium ion beam lithography for sub-10nm pattern definition.
SPIE Newsroom.
(doi:10.1117/2.1201702.006839).
Abstract
An emerging lithographic technique offers a promising alternative to electron beam lithography for fabricating new semiconductor devices with both traditional and non-traditional resists.
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Accepted/In Press date: 9 February 2017
e-pub ahead of print date: 15 May 2017
Keywords:
helium ion beam lithography, Helium ion microscope, nanolithography
Organisations:
Electronics & Computer Science, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 410526
URI: http://eprints.soton.ac.uk/id/eprint/410526
PURE UUID: 5204c21c-6077-4118-a09e-3ff90da2bc85
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Date deposited: 09 Jun 2017 09:02
Last modified: 16 Mar 2024 03:42
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Contributors
Author:
Stuart Boden
Author:
Xiaoqing Shi
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