Scanning helium ion beam lithography
Scanning helium ion beam lithography
Advances in gas field ion source technology over the last decade have led to renewed interest in ion beam lithography as an alternative to the widely-used electron beam lithography technique. At the forefront of this resurgence is helium ion beam lithography, in which a sub-nanometer focused beam of helium ions is used to define high-resolution (sub-10 nm scale) patterns in resist. This chapter firstly describes the helium ion beam system, before presenting a comprehensive study on the unique properties of ion-solid interactions that potentially make helium ions more favourable than electrons in lithographic applications. Examples of helium ion beam lithography applied to various resists, both polymeric and molecular, are then discussed with a focus on sensitivity, proximity effect and minimum feature size of high-density patterns. Potential applications of helium ion beam lithography are reviewed, including rapid prototyping of nanodevices, production of nanoimprint templates and pre-screening of extreme ultraviolet resists.
helium ion beam lithography , helium ion microscope, resist, gas field ion source (GFIS), proximity effect, sub-10 nm, nanofabrication, high-resolution patterning, focused ion beam (FIB), rapid prototyping
563-594
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
18 November 2016
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Boden, Stuart and Shi, Xiaoqing
(2016)
Scanning helium ion beam lithography.
In,
Robinson, Alex and Lawson, Richard
(eds.)
Materials and Processes for Next Generation Lithography.
(Frontiers of Nanoscience, 11)
1 ed.
Elsevier, .
(doi:10.1016/B978-0-08-100354-1.00017-X).
Record type:
Book Section
Abstract
Advances in gas field ion source technology over the last decade have led to renewed interest in ion beam lithography as an alternative to the widely-used electron beam lithography technique. At the forefront of this resurgence is helium ion beam lithography, in which a sub-nanometer focused beam of helium ions is used to define high-resolution (sub-10 nm scale) patterns in resist. This chapter firstly describes the helium ion beam system, before presenting a comprehensive study on the unique properties of ion-solid interactions that potentially make helium ions more favourable than electrons in lithographic applications. Examples of helium ion beam lithography applied to various resists, both polymeric and molecular, are then discussed with a focus on sensitivity, proximity effect and minimum feature size of high-density patterns. Potential applications of helium ion beam lithography are reviewed, including rapid prototyping of nanodevices, production of nanoimprint templates and pre-screening of extreme ultraviolet resists.
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Published date: 18 November 2016
Additional Information:
Chapter 17
Keywords:
helium ion beam lithography , helium ion microscope, resist, gas field ion source (GFIS), proximity effect, sub-10 nm, nanofabrication, high-resolution patterning, focused ion beam (FIB), rapid prototyping
Organisations:
Electronics & Computer Science, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 410707
URI: http://eprints.soton.ac.uk/id/eprint/410707
PURE UUID: 18be199d-df0b-4096-baa3-8780e4497886
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Date deposited: 09 Jun 2017 09:23
Last modified: 16 Mar 2024 03:42
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Contributors
Author:
Stuart Boden
Author:
Xiaoqing Shi
Editor:
Alex Robinson
Editor:
Richard Lawson
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