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Scanning helium ion beam lithography

Scanning helium ion beam lithography
Scanning helium ion beam lithography
Advances in gas field ion source technology over the last decade have led to renewed interest in ion beam lithography as an alternative to the widely-used electron beam lithography technique. At the forefront of this resurgence is helium ion beam lithography, in which a sub-nanometer focused beam of helium ions is used to define high-resolution (sub-10 nm scale) patterns in resist. This chapter firstly describes the helium ion beam system, before presenting a comprehensive study on the unique properties of ion-solid interactions that potentially make helium ions more favourable than electrons in lithographic applications. Examples of helium ion beam lithography applied to various resists, both polymeric and molecular, are then discussed with a focus on sensitivity, proximity effect and minimum feature size of high-density patterns. Potential applications of helium ion beam lithography are reviewed, including rapid prototyping of nanodevices, production of nanoimprint templates and pre-screening of extreme ultraviolet resists.
helium ion beam lithography , helium ion microscope, resist, gas field ion source (GFIS), proximity effect, sub-10 nm, nanofabrication, high-resolution patterning, focused ion beam (FIB), rapid prototyping
563-594
Elsevier
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Robinson, Alex
Lawson, Richard
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Robinson, Alex
Lawson, Richard

Boden, Stuart and Shi, Xiaoqing (2016) Scanning helium ion beam lithography. In, Robinson, Alex and Lawson, Richard (eds.) Materials and Processes for Next Generation Lithography. (Frontiers of Nanoscience, , (doi:10.1016/B978-0-08-100354-1.00017-X), 11) 1 ed. Elsevier, pp. 563-594. (doi:10.1016/B978-0-08-100354-1.00017-X).

Record type: Book Section

Abstract

Advances in gas field ion source technology over the last decade have led to renewed interest in ion beam lithography as an alternative to the widely-used electron beam lithography technique. At the forefront of this resurgence is helium ion beam lithography, in which a sub-nanometer focused beam of helium ions is used to define high-resolution (sub-10 nm scale) patterns in resist. This chapter firstly describes the helium ion beam system, before presenting a comprehensive study on the unique properties of ion-solid interactions that potentially make helium ions more favourable than electrons in lithographic applications. Examples of helium ion beam lithography applied to various resists, both polymeric and molecular, are then discussed with a focus on sensitivity, proximity effect and minimum feature size of high-density patterns. Potential applications of helium ion beam lithography are reviewed, including rapid prototyping of nanodevices, production of nanoimprint templates and pre-screening of extreme ultraviolet resists.

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More information

Published date: 18 November 2016
Additional Information: Chapter 17
Keywords: helium ion beam lithography , helium ion microscope, resist, gas field ion source (GFIS), proximity effect, sub-10 nm, nanofabrication, high-resolution patterning, focused ion beam (FIB), rapid prototyping
Organisations: Electronics & Computer Science, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 410707
URI: https://eprints.soton.ac.uk/id/eprint/410707
PURE UUID: 18be199d-df0b-4096-baa3-8780e4497886
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828

Catalogue record

Date deposited: 09 Jun 2017 09:23
Last modified: 14 Mar 2019 01:42

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