Compliance-free ZrO2/ZrO2−x/ZrO2 resistive memory with controllable interfacial multistate switching behaviour
Compliance-free ZrO2/ZrO2−x/ZrO2 resistive memory with controllable interfacial multistate switching behaviour
A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x /ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 − x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retracting of oxygen ions. The switching is compliance-free due to the intrinsic series resistor by the filaments formed in the ZrO2 layers. By tuning the RESET voltages, controllable and stable multistate memory can be achieved which clearly points towards the capability of developing the next-generation multistate high-performance memory.
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Ye, Sheng
41d5b4a0-6d97-43a2-a1fa-7cdbbf5bc1cd
Kashtiban, Reza J.
2f6b0979-49ee-4e16-9c52-1ed7653c0485
Beanland, Richard
b8f4ba50-f35d-4880-9b97-ce2bcb1bd57a
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Charlton, Martin D.B.
fcf86ab0-8f34-411a-b576-4f684e51e274
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
2 June 2017
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Ye, Sheng
41d5b4a0-6d97-43a2-a1fa-7cdbbf5bc1cd
Kashtiban, Reza J.
2f6b0979-49ee-4e16-9c52-1ed7653c0485
Beanland, Richard
b8f4ba50-f35d-4880-9b97-ce2bcb1bd57a
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Charlton, Martin D.B.
fcf86ab0-8f34-411a-b576-4f684e51e274
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng, Yan, Xingzhao, Ye, Sheng, Kashtiban, Reza J., Beanland, Richard, Morgan, Katrina A., Charlton, Martin D.B. and de Groot, C.H.
(2017)
Compliance-free ZrO2/ZrO2−x/ZrO2 resistive memory with controllable interfacial multistate switching behaviour.
Nanoscale Research Letters, 12, [384].
(doi:10.1186/s11671-017-2155-0).
Abstract
A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x /ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 − x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retracting of oxygen ions. The switching is compliance-free due to the intrinsic series resistor by the filaments formed in the ZrO2 layers. By tuning the RESET voltages, controllable and stable multistate memory can be achieved which clearly points towards the capability of developing the next-generation multistate high-performance memory.
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Huang2017a
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Accepted/In Press date: 19 May 2017
e-pub ahead of print date: 2 June 2017
Published date: 2 June 2017
Organisations:
Electronics & Computer Science, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 411024
URI: http://eprints.soton.ac.uk/id/eprint/411024
ISSN: 1931-7573
PURE UUID: 55d8a114-e444-41d1-965d-0bb14c9b6be3
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Date deposited: 13 Jun 2017 16:32
Last modified: 16 Mar 2024 04:10
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Contributors
Author:
Ruomeng Huang
Author:
Sheng Ye
Author:
Reza J. Kashtiban
Author:
Richard Beanland
Author:
Katrina A. Morgan
Author:
Martin D.B. Charlton
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