The University of Southampton
University of Southampton Institutional Repository

Germanium light sources for silicon photonics

Germanium light sources for silicon photonics
Germanium light sources for silicon photonics
Germanium (Ge) is a group-IV semiconductor promissing for both advanced electronics and photonics applications integrated on Silicon (Si) chips. The high electron mobility is favourable for the Complementary Metal-Oxide-Semiconductor (CMOS) transistors, while the quasi-indirect band gap character is useful for developing light sources for Si photonics. In this talk, we will review the current developments of Ge light sources fabricated using nano-fabrication technologies compatible with CMOS processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. By making a freestanding beam using Micro-Electro-Mechanical-Systems (MEMS) processes, extremely high-tensile strain exceeding a few % can be applicable to Ge, converting indirect to direct band gap characters. Another important process is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will also be discussed. Finally, we will discuss various applications of Ge light sources in potential photonics-electronics convergent systems.
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Al-Attili, Abdelrahman
534a1c1f-3f8c-4a78-b71b-50c156e23373
Burt, Daniel
49c801a2-fb48-40f2-b72f-f713151b96e6
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Takenaka, Mitsuru
36403a83-cd94-4994-a64d-c1f64f291f4f
Higashitarumizu, Naoki
745b7d3e-e723-4fc5-9cf0-b763a8d216d6
Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Al-Attili, Abdelrahman
534a1c1f-3f8c-4a78-b71b-50c156e23373
Burt, Daniel
49c801a2-fb48-40f2-b72f-f713151b96e6
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Takenaka, Mitsuru
36403a83-cd94-4994-a64d-c1f64f291f4f
Higashitarumizu, Naoki
745b7d3e-e723-4fc5-9cf0-b763a8d216d6
Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377

Saito, Shinichi, Al-Attili, Abdelrahman, Burt, Daniel, Oda, Katsuya, Takenaka, Mitsuru, Higashitarumizu, Naoki and Ishikawa, Yasuhiko (2017) Germanium light sources for silicon photonics. International Conference on Materials for Advanced Technologies, Suntec Singapore Convention & Exhibition Centre, Singapore. 17 - 23 Jun 2017.

Record type: Conference or Workshop Item (Paper)

Abstract

Germanium (Ge) is a group-IV semiconductor promissing for both advanced electronics and photonics applications integrated on Silicon (Si) chips. The high electron mobility is favourable for the Complementary Metal-Oxide-Semiconductor (CMOS) transistors, while the quasi-indirect band gap character is useful for developing light sources for Si photonics. In this talk, we will review the current developments of Ge light sources fabricated using nano-fabrication technologies compatible with CMOS processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. By making a freestanding beam using Micro-Electro-Mechanical-Systems (MEMS) processes, extremely high-tensile strain exceeding a few % can be applicable to Ge, converting indirect to direct band gap characters. Another important process is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will also be discussed. Finally, we will discuss various applications of Ge light sources in potential photonics-electronics convergent systems.

Full text not available from this repository.

More information

Published date: 20 June 2017
Additional Information: Invited Paper - B03: Symp B
Venue - Dates: International Conference on Materials for Advanced Technologies, Suntec Singapore Convention & Exhibition Centre, Singapore, 2017-06-17 - 2017-06-23
Organisations: Electronics & Computer Science, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 411145
URI: http://eprints.soton.ac.uk/id/eprint/411145
PURE UUID: 8abf5cb6-acfc-41e0-bf88-043f9b57ef67
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 15 Jun 2017 16:31
Last modified: 07 Oct 2020 03:37

Export record

Contributors

Author: Shinichi Saito ORCID iD
Author: Abdelrahman Al-Attili
Author: Daniel Burt
Author: Katsuya Oda
Author: Mitsuru Takenaka
Author: Naoki Higashitarumizu
Author: Yasuhiko Ishikawa

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×