Active counter electrode in a-SiC electrochemical metallization memory

Abstract

Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher ROFF/RON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

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Identifiers

ORCID for K.A. Morgan: orcid.org/0000-0002-8600-4322

ORCID for R. Huang: orcid.org/0000-0003-1185-635X

ORCID for J.-Y. Ou: orcid.org/0000-0001-8028-6130

ORCID for L. Jiang: orcid.org/0000-0002-3400-825X

ORCID for C.H. de Groot: orcid.org/0000-0002-3850-7101

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