The University of Southampton
University of Southampton Institutional Repository

Active counter electrode in a-SiC electrochemical metallization memory

Active counter electrode in a-SiC electrochemical metallization memory
Active counter electrode in a-SiC electrochemical metallization memory
Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher ROFF/RON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.
0022-3727
1-7
Morgan, K.A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Fan, J.
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Huang, R.
c6187811-ef2f-4437-8333-595c0d6ac978
Zhong, L.
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, R.
35716eae-8c54-4dcf-800d-a08c6382dd1e
Ou, J.-Y.
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Jiang, L.
374f2414-51f0-418f-a316-e7db0d6dc4d1
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Morgan, K.A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Fan, J.
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Huang, R.
c6187811-ef2f-4437-8333-595c0d6ac978
Zhong, L.
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, R.
35716eae-8c54-4dcf-800d-a08c6382dd1e
Ou, J.-Y.
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Jiang, L.
374f2414-51f0-418f-a316-e7db0d6dc4d1
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Morgan, K.A., Fan, J., Huang, R., Zhong, L., Gowers, R., Ou, J.-Y., Jiang, L. and de Groot, C.H. (2017) Active counter electrode in a-SiC electrochemical metallization memory. Journal of Physics D: Applied Physics, 50 (32), 1-7, [325102]. (doi:10.1088/1361-6463/aa7bbe).

Record type: Article

Abstract

Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher ROFF/RON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

Text
Morgan IOP Journal of Phys D v2 clean - Accepted Manuscript
Download (1MB)

More information

Accepted/In Press date: 21 June 2017
e-pub ahead of print date: 19 July 2017
Organisations: Engineering Mats & Surface Engineerg Gp, Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Faculty of Engineering and the Environment, Education Hub

Identifiers

Local EPrints ID: 411698
URI: http://eprints.soton.ac.uk/id/eprint/411698
ISSN: 0022-3727
PURE UUID: 52d9fdf1-bd94-47b5-aa48-722b10a3c7f7
ORCID for K.A. Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for J.-Y. Ou: ORCID iD orcid.org/0000-0001-8028-6130
ORCID for L. Jiang: ORCID iD orcid.org/0000-0002-3400-825X
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 22 Jun 2017 16:31
Last modified: 07 Oct 2020 04:59

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×