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Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memory

Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memory
Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memory
We report here a ZrO2−x /ZrO2-based bilayer resistive switching memory with unique properties that enables the selection of the switching mode by applying different electroforming current compliances. Two opposite polarity modes, positive bipolar and negative bipolar, correspond to the switching in the ZrO2 and ZrO2−x layer, respectively. The ZrO2 layer is proved to be responsible for the negative bipolar mode which is also observed in a ZrO2 single layer device. The oxygen deficient ZrO2−x layer plays the dominant role in the positive bipolar mode, which is exclusive to the bilayer memory. A systematic investigation of the ZrO2−x composition in the bilayer memory suggests that ZrO1.8 layer demonstrates optimum switching performance with low switching voltage, narrow switching voltage distribution and good cycling endurance. An excess of oxygen vacancies, beyond this composition, leads to a deterioration of switching properties. The formation and dissolution of the oxygen vacancy filament model has been proposed to explain both polarity switching behaviours and the improved properties in the bilayer positive bipolar mode are attributed to the confined oxygen vacancy filament size within the ZrO2−x layer.
0022-3727
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Charlton, Martin D.B.
fcf86ab0-8f34-411a-b576-4f684e51e274
De Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Charlton, Martin D.B.
fcf86ab0-8f34-411a-b576-4f684e51e274
De Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c

Huang, Ruomeng, Yan, Xingzhao, Morgan, Katrina A., Charlton, Martin D.B. and De Groot, C.H. (Kees) (2017) Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memory. Journal of Physics D: Applied Physics, 50 (17), [175101]. (doi:10.1088/1361-6463/aa64bc).

Record type: Article

Abstract

We report here a ZrO2−x /ZrO2-based bilayer resistive switching memory with unique properties that enables the selection of the switching mode by applying different electroforming current compliances. Two opposite polarity modes, positive bipolar and negative bipolar, correspond to the switching in the ZrO2 and ZrO2−x layer, respectively. The ZrO2 layer is proved to be responsible for the negative bipolar mode which is also observed in a ZrO2 single layer device. The oxygen deficient ZrO2−x layer plays the dominant role in the positive bipolar mode, which is exclusive to the bilayer memory. A systematic investigation of the ZrO2−x composition in the bilayer memory suggests that ZrO1.8 layer demonstrates optimum switching performance with low switching voltage, narrow switching voltage distribution and good cycling endurance. An excess of oxygen vacancies, beyond this composition, leads to a deterioration of switching properties. The formation and dissolution of the oxygen vacancy filament model has been proposed to explain both polarity switching behaviours and the improved properties in the bilayer positive bipolar mode are attributed to the confined oxygen vacancy filament size within the ZrO2−x layer.

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Accepted/In Press date: 6 March 2017
e-pub ahead of print date: 27 March 2017
Published date: 27 March 2017
Organisations: Electronics & Computer Science, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 411815
URI: http://eprints.soton.ac.uk/id/eprint/411815
ISSN: 0022-3727
PURE UUID: 6615ee3d-3504-4bc7-8cad-9f5176a5b2b3
ORCID for Katrina A. Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for C.H. (Kees) De Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 26 Jun 2017 16:31
Last modified: 17 Dec 2019 06:07

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Contributors

Author: Ruomeng Huang
Author: Xingzhao Yan
Author: Martin D.B. Charlton

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